Time‐resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si

1996 ◽  
Vol 69 (14) ◽  
pp. 2089-2091 ◽  
Author(s):  
M. Godlewski ◽  
J. P. Bergman ◽  
B. Monemar ◽  
U. Rossner ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Time Resolved ◽  
Gas Source ◽  
Aln Buffer ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

scholarly journals Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

1996 ◽  
Vol 90 (4) ◽  
pp. 789-792
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
U. Rossner ◽  
A. Barski
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gas Source ◽  
Aln Buffer

Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

2001 ◽  
Vol 78 (6) ◽  
pp. 754-756 ◽  
Author(s):  
V. Bousquet ◽  
J. Heffernan ◽  
J. Barnes ◽  
S. Hooper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gas Source

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

2008 ◽  
Vol 25 (11) ◽  
pp. 4097-4100 ◽  
Author(s):  
Lin Guo-Qiang ◽  
Zeng Yi-Ping ◽  
Wang Xiao-Liang ◽  
Liu Hong-Xin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Aln Buffer

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Lester F. Eastman ◽  
Colin Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Near Surface ◽  
Low Leakage ◽  
Sheet Charge ◽  
Aln Buffer

AbstractIn this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm-2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm-2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm-3 were routinely achieved in this study.The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Influence of AlN buffer layer on molecular beam epitaxy growth of wurtzite Al1−xScxN thin films

2020 ◽  
Vol 43 (1) ◽  
Author(s):  
Shashidhara Acharya ◽  
Abhijit Chatterjee ◽  
Seema ◽  
Mukul Gupta ◽  
Bivas Saha
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Aln Buffer

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

2011 ◽  
Vol 110 (5) ◽  
pp. 053506 ◽  
Author(s):  
Matt D. Brubaker ◽  
Igor Levin ◽  
Albert V. Davydov ◽  
Devin M. Rourke ◽  
Norman A. Sanford ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
Aln Buffer
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