Growth and properties of Cd3As2 films prepared by pulsed-laser evaporation

1985 ◽  
Vol 63 (6) ◽  
pp. 815-818 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Williams
Keyword(s):  
Substrate Temperature ◽  
Deposition Temperature ◽  
Bulk Material ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Electrical Characteristics

Pulsed-laser evaporation has been used to prepare films of Cd3As2. It is found that the electrical quality of the prepared films improves markedly as the substrate temperature is increased from 295 to 433 K. The films deposited at about 430 K are highly oriented, with electrical characteristics approaching those of the bulk material. Electron mobilities reach values of 6.05 × 103 cm2/V∙s at 300 K (i.e., comparable to bulk mobilities) and 9 × 103 cm2/V∙s at 10 K (which is within a factor of two of those for the bulk material). Further increases in the substrate-deposition temperature give rise to films that are arsenic deficient.

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 1327-1330
Author(s):  
Ji Chul Jung ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Junction Diode ◽  
P Type

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.

Morphological and Structural Properties of NbN Thin Films Deposited by Pulsed Laser Deposition

2012 ◽  
Vol 445 ◽  
pp. 667-672 ◽  
Author(s):  
Ashraf Hassan Farha ◽  
Ali Oguz Er ◽  
Yüksel Ufuktepe ◽  
Hani E. Elsayed-Ali
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Critical Factor ◽  
Niobium Nitride ◽  
Preferred Orientation ◽  
Laser Deposition ◽  
Crystallite Sizes

Niobium nitride (NbN) films were deposited on Nb using pulsed laser deposition (PLD), and the effect of substrate deposition temperature on the preferred orientation, phase, and surface properties of NbN films were explored by x-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that the substrate deposition temperature has a significant influence on properties of the NbN films, leading to a pronounced change in the preferred orientation of the crystal structure and the phase. We find that substrate temperature is a critical factor in determining the phase of the NbN films. For a substrate temperature of 650 °C 850 °C, the NbN film formed in the cubic δ-NbN phase mixed with the β-Nb2N hexagonal phase. With an increase in substrate temperature, NbN layers became β-Nb2N single phase. Essentially, films with a mainly β-Nb2N hexagonal phase were obtained at deposition temperatures above 850 °C. Surface roughness and crystallite sizes of the β-Nb2N hexagonal phase increased as the deposition temperatures increased.

Influences of oxygen pressure and substrate temperature on the quality of NdBa2Cu3Oxthin films prepared by pulsed laser deposition

2004 ◽  
Vol 17 (6) ◽  
pp. 775-780 ◽  
Author(s):  
Yusuke Ichino ◽  
Yutaka Yoshida ◽  
Yoshiaki Takai ◽  
Kaname Matsumoto ◽  
Hiroshi Ikuta ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed Laser Deposition of Gallium Nitride on Sapphire

1997 ◽  
Vol 468 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
R. P. Sharma ◽  
S. Choopun ◽  
M. J. Downes ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Rocking Curve ◽  
Gap Width ◽  
Minimum Yield

ABSTRACTWe have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Dependence on substrate temperature of the conformation and structure of a poly[3-(4-octyloxyphenyl)thiophene] (POOPT) thin film obtained by matrix assisted pulsed laser evaporation (MAPLE)

2009 ◽  
Vol 206 (9) ◽  
pp. 2166-2170 ◽  
Author(s):  
Valeria Califano ◽  
Francesco Bloisi ◽  
Luciano Vicari ◽  
Antonio Cassinese ◽  
Mario Barra ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Laser Evaporation
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