Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

2006 ◽  
Vol 252 (13) ◽  
pp. 4824-4828 ◽  
Author(s):  
Katarzyna Rodrigo ◽  
Pawel Czuba ◽  
Bo Toftmann ◽  
Jørgen Schou ◽  
Roman Pedrys
2009 ◽  
Vol 255 (24) ◽  
pp. 9873-9876 ◽  
Author(s):  
R. Cristescu ◽  
C. Popescu ◽  
A. Popescu ◽  
S. Grigorescu ◽  
I.N. Mihailescu ◽  
...  

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.


1985 ◽  
Vol 63 (6) ◽  
pp. 815-818 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Williams

Pulsed-laser evaporation has been used to prepare films of Cd3As2. It is found that the electrical quality of the prepared films improves markedly as the substrate temperature is increased from 295 to 433 K. The films deposited at about 430 K are highly oriented, with electrical characteristics approaching those of the bulk material. Electron mobilities reach values of 6.05 × 103 cm2/V∙s at 300 K (i.e., comparable to bulk mobilities) and 9 × 103 cm2/V∙s at 10 K (which is within a factor of two of those for the bulk material). Further increases in the substrate-deposition temperature give rise to films that are arsenic deficient.


2007 ◽  
Vol 253 (19) ◽  
pp. 7952-7956 ◽  
Author(s):  
A. Purice ◽  
J. Schou ◽  
P. Kingshott ◽  
N. Pryds ◽  
M. Dinescu

2007 ◽  
Vol 254 (4) ◽  
pp. 1244-1248 ◽  
Author(s):  
A. Purice ◽  
J. Schou ◽  
N. Pryds ◽  
M. Filipescu ◽  
M. Dinescu

2009 ◽  
Vol 206 (9) ◽  
pp. 2166-2170 ◽  
Author(s):  
Valeria Califano ◽  
Francesco Bloisi ◽  
Luciano Vicari ◽  
Antonio Cassinese ◽  
Mario Barra ◽  
...  

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