Caractéristiques de la décharge d'un laser à argon multiwatt continu

1985 ◽  
Vol 63 (2) ◽  
pp. 240-245
Author(s):  
J.-L. Breton ◽  
G. Bédard
Keyword(s):  
Magnetic Field ◽  
Continuous Wave ◽  
Axial Magnetic Field ◽  
High Current Density ◽  
High Current ◽  
Argon Ion Laser ◽  
Continuous Current ◽  
Ion Laser ◽  
Discharge Parameters ◽  
Argon Ion

We report on the construction of a 10-mm bore 60-W continuous wave argon ion laser operated at a discharge power of about 64 kW, which provides a continuous current of 200 A. Specially designed high-current-density anodes and cathodes are described. Experimental results on the effects of an axial magnetic field (0–875 G) on discharge parameters are also presented.

Experimental study of argon ion laser discharge at high current

1972 ◽  
Vol 43 (12) ◽  
pp. 5068-5073 ◽  
Author(s):  
C. P. Wang ◽  
Shao‐Chi Lin
Keyword(s):  
Experimental Study ◽  
High Current ◽  
Argon Ion Laser ◽  
Laser Discharge ◽  
Ion Laser ◽  
Argon Ion

Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
S.T. Johnson ◽  
K.G. Orrman-Rossiter ◽  
J.S. Williams
Keyword(s):  
Solid Solubility ◽  
Continuous Wave ◽  
Solid Phase ◽  
High Dose ◽  
Incoherent Light ◽  
Ion Channeling ◽  
Argon Ion Laser ◽  
Conventional Furnace ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTHigh dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.

Calculation of the Output Power of the Argon-Ion Laser Superimposed by a Magnetic Field

1975 ◽  
Vol 14 (5) ◽  
pp. 661-666 ◽  
Author(s):  
Kunihide Tachibana ◽  
Takashi Fujimoto ◽  
Kuniya Fukuda
Keyword(s):  
Magnetic Field ◽  
Output Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Inversion saturation in an argon-ion laser at high current densities

1970 ◽  
Vol 12 (5) ◽  
pp. 698-699 ◽  
Author(s):  
V. V. Lebedeva ◽  
D. M. Mashtakov ◽  
A. I. Odintsov
Keyword(s):  
High Current ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Current Densities ◽  
Argon Ion

scholarly journals Growth Characteristics of Fiber Bragg Gratings Fabricated in High Germania Boron Co-Doped Fiber

1970 ◽  
Vol 3 (2) ◽  
Author(s):  
S. W. Harun , P. Poopalan and H. Ahmad
Keyword(s):  
Continuous Wave ◽  
Uv Light ◽  
Bragg Gratings ◽  
Growth Characteristics ◽  
Phase Mask ◽  
Wavelength Shift ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion ◽  
Co Doped

This paper reports and provides an explanation for the growth characteristics of fibre Bragg gratings (FBGs) fabricated  in high germania boron co-doped optical fiber by using a continuous wave (CW) doubled frequency Argon ion laser as an UV light source. The grating reflectivity and Bragg wavelength shift as a function of exposure time are measured. The index modulation time is observed to have a good fit to a power law of the form n = Ctb (t is the time, C and b are constants), whereas the exponent b of 0.3 is obtained for the FBGs. The UV laser light also causes a shift of the resonant wavelength with fabrication time. The fastest wavelength shift is shown to be 0.53 nm after 524 seconds exposure.Keywords: Fiber Bragg grating, Argon ion laser, Phase mask method, Growth characteristics.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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