Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
S.T. Johnson ◽  
K.G. Orrman-Rossiter ◽  
J.S. Williams

ABSTRACTHigh dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.

1985 ◽  
Vol 63 (2) ◽  
pp. 240-245
Author(s):  
J.-L. Breton ◽  
G. Bédard

We report on the construction of a 10-mm bore 60-W continuous wave argon ion laser operated at a discharge power of about 64 kW, which provides a continuous current of 200 A. Specially designed high-current-density anodes and cathodes are described. Experimental results on the effects of an axial magnetic field (0–875 G) on discharge parameters are also presented.


1970 ◽  
Vol 3 (2) ◽  
Author(s):  
S. W. Harun , P. Poopalan and H. Ahmad

This paper reports and provides an explanation for the growth characteristics of fibre Bragg gratings (FBGs) fabricated  in high germania boron co-doped optical fiber by using a continuous wave (CW) doubled frequency Argon ion laser as an UV light source. The grating reflectivity and Bragg wavelength shift as a function of exposure time are measured. The index modulation time is observed to have a good fit to a power law of the form n = Ctb (t is the time, C and b are constants), whereas the exponent b of 0.3 is obtained for the FBGs. The UV laser light also causes a shift of the resonant wavelength with fabrication time. The fastest wavelength shift is shown to be 0.53 nm after 524 seconds exposure.Keywords: Fiber Bragg grating, Argon ion laser, Phase mask method, Growth characteristics.


Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.


1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  

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