Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing
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ABSTRACTHigh dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.
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2005 ◽
Vol 23
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pp. 43-46
1972 ◽
Vol 5
(10)
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pp. 1807-1814
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1972 ◽
Vol 11
(10)
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pp. 1501-1507
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