Experimental study of argon ion laser discharge at high current

1972 ◽  
Vol 43 (12) ◽  
pp. 5068-5073 ◽  
Author(s):  
C. P. Wang ◽  
Shao‐Chi Lin
Keyword(s):  
Experimental Study ◽  
High Current ◽  
Argon Ion Laser ◽  
Laser Discharge ◽  
Ion Laser ◽  
Argon Ion

Caractéristiques de la décharge d'un laser à argon multiwatt continu

1985 ◽  
Vol 63 (2) ◽  
pp. 240-245
Author(s):  
J.-L. Breton ◽  
G. Bédard
Keyword(s):  
Magnetic Field ◽  
Continuous Wave ◽  
Axial Magnetic Field ◽  
High Current Density ◽  
High Current ◽  
Argon Ion Laser ◽  
Continuous Current ◽  
Ion Laser ◽  
Discharge Parameters ◽  
Argon Ion

We report on the construction of a 10-mm bore 60-W continuous wave argon ion laser operated at a discharge power of about 64 kW, which provides a continuous current of 200 A. Specially designed high-current-density anodes and cathodes are described. Experimental results on the effects of an axial magnetic field (0–875 G) on discharge parameters are also presented.

Inversion saturation in an argon-ion laser at high current densities

1970 ◽  
Vol 12 (5) ◽  
pp. 698-699 ◽  
Author(s):  
V. V. Lebedeva ◽  
D. M. Mashtakov ◽  
A. I. Odintsov
Keyword(s):  
High Current ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Current Densities ◽  
Argon Ion

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

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