scholarly journals Free to Bound Recombination and Screening Effects in CdS

1974 ◽  
Vol 52 (8) ◽  
pp. 721-727 ◽  
Author(s):  
R. M. Egloff ◽  
K. Colbow
Keyword(s):  
Binding Energy ◽  
Broad Band ◽  
Energy Shift ◽  
Excitation Intensity ◽  
Free Carrier ◽  
Hot Electrons ◽  
Acceptor Interaction ◽  
Shallow Acceptor ◽  
Free Carriers ◽  
Donor Acceptor

The luminescence spectrum of CdS consists of a number of sharp lines from 2.43 eV to the band edge at 2.58 eV and a number of broad bands below 2.43 eV. The highest energy broad band is due to a free electron recombining with a hole bound at a shallow acceptor (free to bound). The dependence of the free to bound peak of energy on temperature and excitation intensity is investigated in the interval 4.2–80 K. Increasing the excitation intensity results in a shift to higher energy. This is interpreted in terms of free carrier screening which reduces the binding energy of the acceptor. An energy shift due to the recombination of hot electrons is also considered. An often neglected donor–acceptor interaction term is discussed and found to be significant for an accurate measurement of the acceptor binding energy. Experimental observations suggest that screening of excitons due to free carriers is ineffective.

Formation of Shallow Energy Levels in Mn+ Implanted GaAs with Extremely Low Background Impurity Concentration

1993 ◽  
Vol 316 ◽  
Author(s):  
Honglie Shen ◽  
Yunosuke Makita ◽  
Akimasa Yamada ◽  
Shigeru Niki ◽  
Tsutomu Iida ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Energy Levels ◽  
Energy Shift ◽  
Manganese Concentration ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Background Impurity ◽  
Peak Energy ◽  
Wide Range ◽  
Donor Acceptor

ABSTRACTManganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), “G”, “G' “ “H” and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at ~880nm. With increasing manganese concentration to 1×1019cm-3, “G” exhibits no energy shift, suggesting that “G” is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), “G” and “G' “ present no energy shift with increasing excitation intensity, while “H” and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. “G” and (Mn°, X) are found to hold similar radiative origin which is different from “G”. Temperature dependence measurement reveals that emission “G” has a thermal activation energy of 5.4meV.

scholarly journals Evidence for Shallow Acceptor Levels in MBE Grown GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
B. G. Ren ◽  
J. W. Orton ◽  
T. S. Cheng ◽  
D. J. Dewsnip ◽  
D. E. Lacklison ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Binding Energy ◽  
Shallow Acceptor ◽  
Recent Estimate ◽  
Donor Acceptor ◽  
Acceptor Binding Energy

We report the results of photoluminescence measurements on a number of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we draw attention to a new observation of a line at approximately 3.40eV which is accompanied by complex fine structure and interpret it as due to a donor-acceptor (DA) transition. Assuming a donor energy of 30meV, we derive an acceptor binding energy of approximately 80meV which is very much smaller than the accepted value of 250meV for the well established Mg acceptor. However, our result is in agreement with a recent estimate of the hydrogenic acceptor energy as being 85meV.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals In-Depth Investigation of a Donor–Acceptor Interaction on the Heavy-Group-14@Group-13-Diyls in Transition-Metal Tetrylone Complexes: Structure, Bonding, and Property

ACS Omega ◽  
2020 ◽  
Vol 5 (33) ◽  
pp. 21271-21287
Author(s):  
Huynh Thi Phuong Loan ◽  
Thanh Q. Bui ◽  
Tran Thi Ai My ◽  
Nguyen Thi Thanh Hai ◽  
Duong Tuan Quang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Group 14 ◽  
Acceptor Interaction ◽  
Group 13 ◽  
Donor Acceptor ◽  
Heavy Group
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