Shallow acceptor binding energy and lifetime of donor‐acceptor pairs in gallium arsenide

1976 ◽  
Vol 47 (7) ◽  
pp. 3219-3223 ◽  
Author(s):  
Takeshi Kamiya ◽  
Elmar Wagner
Keyword(s):  
Gallium Arsenide ◽  
Binding Energy ◽  
Shallow Acceptor ◽  
Donor Acceptor ◽  
Acceptor Binding Energy

scholarly journals Evidence for Shallow Acceptor Levels in MBE Grown GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
B. G. Ren ◽  
J. W. Orton ◽  
T. S. Cheng ◽  
D. J. Dewsnip ◽  
D. E. Lacklison ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Binding Energy ◽  
Shallow Acceptor ◽  
Recent Estimate ◽  
Donor Acceptor ◽  
Acceptor Binding Energy

We report the results of photoluminescence measurements on a number of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we draw attention to a new observation of a line at approximately 3.40eV which is accompanied by complex fine structure and interpret it as due to a donor-acceptor (DA) transition. Assuming a donor energy of 30meV, we derive an acceptor binding energy of approximately 80meV which is very much smaller than the accepted value of 250meV for the well established Mg acceptor. However, our result is in agreement with a recent estimate of the hydrogenic acceptor energy as being 85meV.

scholarly journals Free to Bound Recombination and Screening Effects in CdS

1974 ◽  
Vol 52 (8) ◽  
pp. 721-727 ◽  
Author(s):  
R. M. Egloff ◽  
K. Colbow
Keyword(s):  
Binding Energy ◽  
Broad Band ◽  
Energy Shift ◽  
Excitation Intensity ◽  
Free Carrier ◽  
Hot Electrons ◽  
Acceptor Interaction ◽  
Shallow Acceptor ◽  
Free Carriers ◽  
Donor Acceptor

The luminescence spectrum of CdS consists of a number of sharp lines from 2.43 eV to the band edge at 2.58 eV and a number of broad bands below 2.43 eV. The highest energy broad band is due to a free electron recombining with a hole bound at a shallow acceptor (free to bound). The dependence of the free to bound peak of energy on temperature and excitation intensity is investigated in the interval 4.2–80 K. Increasing the excitation intensity results in a shift to higher energy. This is interpreted in terms of free carrier screening which reduces the binding energy of the acceptor. An energy shift due to the recombination of hot electrons is also considered. An often neglected donor–acceptor interaction term is discussed and found to be significant for an accurate measurement of the acceptor binding energy. Experimental observations suggest that screening of excitons due to free carriers is ineffective.

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 415-418 ◽  
Author(s):  
Jian Wu Sun ◽  
Georgios Zoulis ◽  
Jean Lorenzzi ◽  
Nikoletta Jegenyes ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Lower Energy ◽  
Acceptor Pair ◽  
Zero Phonon Line ◽  
Transition Energies ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

scholarly journals Optical Activation Behavior of Ion Implanted Acceptor Species in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 507-513 ◽  
Author(s):  
B.J. Skromme ◽  
G.L. Martinez
Keyword(s):  
Variable Temperature ◽  
Spectroscopic Properties ◽  
Acceptor Pair ◽  
High Quality ◽  
Shallow Acceptor ◽  
Implantation Damage ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Optical Binding ◽  
Dose Dependent

Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300 °C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed to insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.

Reducing the Exciton Binding Energy of Donor–Acceptor‐Based Conjugated Polymers to Promote Charge‐Induced Reactions

2019 ◽  
Vol 58 (30) ◽  
pp. 10236-10240 ◽  
Author(s):  
Zhi‐An Lan ◽  
Guigang Zhang ◽  
Xiong Chen ◽  
Yongfan Zhang ◽  
Kai A. I. Zhang ◽  
...  
Keyword(s):  
Binding Energy ◽  
Conjugated Polymers ◽  
Exciton Binding Energy ◽  
Donor Acceptor

Tunable exciton binding energy in 2D hybrid layered perovskites through donor–acceptor interactions within the organic layer

2020 ◽  
Vol 12 (8) ◽  
pp. 672-682 ◽  
Author(s):  
James V. Passarelli ◽  
Catherine M. Mauck ◽  
Samuel W. Winslow ◽  
Collin F. Perkinson ◽  
Jacob C. Bard ◽  
...  
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Organic Layer ◽  
Donor Acceptor ◽  
Layered Perovskites

scholarly journals Beryllium acceptor binding energy in AlN

2008 ◽  
Vol 93 (14) ◽  
pp. 141104 ◽  
Author(s):  
A. Sedhain ◽  
T. M. Al Tahtamouni ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Binding Energy ◽  
Acceptor Binding Energy

scholarly journals Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells

2002 ◽  
Vol 92 (10) ◽  
pp. 6039-6042 ◽  
Author(s):  
W. M. Zheng ◽  
M. P. Halsall ◽  
P. Harmer ◽  
P. Harrison ◽  
M. J. Steer
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acceptor Binding Energy
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