Electron–electron scattering in potassium

1979 ◽  
Vol 57 (8) ◽  
pp. 1216-1223 ◽  
Author(s):  
J. G. Cook

The electrical resistivity ρ, thermal conductivity κ, and thermoelectric power S have been measured for two bare K specimens between 80 and 330 K. The data fully support the main conclusions of an earlier, preliminary study by Cook and Laubitz. The Lorenz function L = κρ/T does not approach the Sommerfeld value L0 with increasing temperature. Both the magnitude and temperature dependence of L–L0 indicate the presence of an added term Wee in the thermal resistivity, due to electron–electron scattering. Such scattering also affects S. It is shown that the data for K, together with published values of B = Wee/T for Na, Rb, and the noble metals, form a consistent picture of electron–electron scattering in the monovalent metals above the Debye temperature.

1982 ◽  
Vol 60 (12) ◽  
pp. 1759-1769 ◽  
Author(s):  
J. G. Cook

The thermal conductivity, electrical resistivity, and thermoelectric power of Cs have been measured from 40 K, through the melting point which is near 300 K, up to 600 K. The thermal resistivity of both solid and liquid Cs contains a contribution from electron–electron scattering, which agrees well with theory. The electrical resistivity shows an appreciable "premelting" effect, which is tentatively attributed to impurities.


1966 ◽  
Vol 44 (10) ◽  
pp. 2293-2302 ◽  
Author(s):  
H. L. Malm ◽  
S. B. Woods

Low-temperature measurements of electrical resistivity, thermal conductivity, and thermoelectric power on silver alloys containing 0.005, 0.067, 0.11, and 0.31 at.% of manganese are reported. The same specimens were used for the measurement of all properties over the temperature range from 2 to 25 °K. The well-known minimum and maximum are observed in the electrical resistivity of the three more concentrated alloys and the minimum is visible in the most dilute alloy near the lowest temperatures of measurement. Associated effects are observed in the other properties and their possible relationship to theoretical electron scattering mechanisms, particularly that of Kondo, is discussed.


1979 ◽  
Vol 57 (6) ◽  
pp. 871-883 ◽  
Author(s):  
J.G. Cook

The electrical resistivity, thermal conductivity, and thermoelectric power of Rb have been measured between 40 and 300 K. Two of the samples were bare, to avoid thermal contraction difficulties; the softness of these samples necessitated further, calibration, measurements on a third sample in glass, just below the freezing point. The electrical resistivity values agree well with published values of Dugdale and Phillips. The Lorenz function, not previously examined in detail above 25 K, shows strong evidence of electron–electron scattering, of a strength intermediate to that calculated by Kukkonen for Thomas–Fermi screening, and for Geldart–Taylor screening. Such scattering appears to have affected the thermoelectric power as well.


2007 ◽  
Vol 124-126 ◽  
pp. 1019-1022 ◽  
Author(s):  
K.W. Jang ◽  
Il Ho Kim ◽  
Jung Il Lee ◽  
Good Sun Choi

Non-stoichiometric Zn4-xSb3 compounds with x=0~0.5 were prepared by vacuum melting at 1173K and annealing solidified ingots at 623K. Electrical resistivity and Seebeck coefficient at 450K increased from 1.8cm and 145K-1 for Zn4Sb3(x=0) to 56.2cm 350K-1 for Zn3.5Sb3(x=0.5) due to the decrease of the carrier concentration. Hall mobility and carrier concentration was 31.5cm2V-1s-1 and 1.32X1020cm-3 for Zn4Sb3 and 70cm2V-1s-1 and 2.80X1018cm-3 for Zn3.5Sb3. Electrical resistivity of Zn4-xSb3 with x=0~0.2 showed linearly increasing temperature dependence, whereas those of Zn4-xSb3 with x=0.3~0.5 above 450 K tended to decrease. Thermal conductivity of Zn4Sb3 was 8.5mWcm-1K-1 at room temperature and that of Zn4-xSb3 with x≥0.3 was around 11mWcm-1K-1. Maximum ZT of Zn4Sb3 was obtained around 1.3 at 600K. Zn4Sb3 with x=0.3~0.5 showed very small value of ZT=0.2~0.3.


2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


1957 ◽  
Vol 35 (8) ◽  
pp. 892-900 ◽  
Author(s):  
G. K. White ◽  
S. B. Woods

Measurements of the thermal conductivity from 2° to 90 ° K. and electrical conductivity from 2° to 300 ° K. are reported for vanadium, niobium, and hafnium. Although the vanadium and hafnium are not as pure as we might wish, measurements on these metals and on niobium allow a tabulation of the "ideal" electrical resistivity clue to thermal scattering for these elements from 300 ° K. down to about 20 ° K. Ice-point values of the "ideal" electrical resistivity are 18.3 μΩ-cm. for vanadium, 13.5 μΩ-cm. for niobium, and 29.4 μΩ-cm. for hafnium. Values for the "ideal" thermal resistivity of vanadium and niobium are deduced from the experimental results although for vanadium and more particularly for hafnium, higher purity specimens are required before a very reliable study of "ideal" thermal resistivity can be made. For the highly ductile pure niobium, the superconducting transition temperature, as determined from electrical resistance, appears to be close to 9.2 ° K.


1975 ◽  
Vol 53 (5) ◽  
pp. 486-497 ◽  
Author(s):  
J. G. Cook ◽  
M. J. Laubitz ◽  
M. P. Van der Meer

Data are presented for the thermal and electrical resistivity and thermoelectric power of two samples of Ca (having residual resistance ratios of 10 and 70) between 30 and 300 K. Large deviations from both Matthiessen's rule and the Wiedemann–Franz relationship are observed. The former are tentatively attributed to the presence of two distinct groups of carriers in Ca, and analyzed using the two band model. The latter deviations are interpreted as the effects of band structure. The thermoelectric power of Ca is large. In many respects the transport properties of Ca appear to be similar to those of the transition metals.


1962 ◽  
Vol 17 (10) ◽  
pp. 886-889 ◽  
Author(s):  
Y. Baer ◽  
G. Busch ◽  
C. Fröhlich ◽  
E. Steigmeier

The thermal conductivity, electrical conductivity. Hall coefficient und thermoelectric power of Ag2Se have been measured between 80 and 600°K. In the low temperature semiconductor phase the thermal conductivity increases with increasing temperature due to the high amount of carrier contribution. The latter has been calculated using the Price formula. Agreement with experiment is satisfactory. The specific heat has been measured between 30 and 200°C. For the latent heat a value of (5.7 ± 0.5) cal/gr was determined in agreement with measurements of Bellati and Lussana 4. In addition to the transition at 133 °C an unknown new transition has been found at about 90 °C.


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