Change of the absolute thermoelectric power and electrical resistivity of copper by cold-working at liquid air and room temperature

1956 ◽  
Vol 5 (1) ◽  
pp. 437-441 ◽  
Author(s):  
M. J. Druyvesteyn ◽  
D. J. van Ooijen
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Cold Working ◽  
The Absolute

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Synthesis and thermoelectric power factor of LSCO perovskites

2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Room Temperature ◽  
Morphological Properties ◽  
Measured Temperature ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.

scholarly journals Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions.

2020 ◽  
Vol 9 (7) ◽  
pp. 894-896
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Selenium Concentration ◽  
Negative Temperature ◽  
Glass Substrates ◽  
Exponential Change

Sb-Se thin films of varying composition have been deposited on glass substrates at room temperature. These films were annealed at temperature interval of 50 0K. The electrical resistivity (ρ) and thermoelectric power (α) of same films were measured. The resistance of semiconducting films decreases rapidly on heating showing negative temperature coefficient of resistance (T.C.R.). The composition dependent resistivity shows exponential change, sharp fall of resistivity may be attributed due to increase of metallic ‘Sb’ in Sb-Se thin films. The composition dependent activation energy of Sb-Se thin films has been calculated. The activation energy (∆E) of semiconducting films was found to increase with selenium concentration. For different compositions thermoelectric power (α) increases upto 70 at. wt.% of Se concentration and then slowly decreases. The I-V characteristics of Sb-Se thin films were measured using copper (Cu) contacts. The films show ohmic conduction for different applied voltages as well as various concentrations of Selenium (Se) in Sb-Se thin films

Electrical Resistivity, Magnetic Susceptibility and Thermoelectric Power of PtGa2

1990 ◽  
Author(s):  
Li-Shing Hsu ◽  
Lu-Wei Zhou ◽  
F. L. Machado ◽  
W. G. Clark ◽  
R. S. Williams
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Thermoelectric Power

The electrical resistivity of lithium-6

1961 ◽  
Vol 263 (1314) ◽  
pp. 407-419 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Isotopic Composition ◽  
Specific Heat ◽  
Room Temperature ◽  
Natural Isotopic Composition ◽  
Square Roots ◽  
Conduction Electrons ◽  
Ionic Mass ◽  
Theoretical Predictions ◽  
Electrical Resistivities

The electrical resistivities of lithium -6 and lithium of natural isotopic composition have been studied between 4°K and room temperature. In addition, their absolute resistivities have been carefully compared at room temperature. These measurements show that the effect of ionic mass on electrical resistivity agrees with simple theoretical predictions, namely, that the properties of the conduction electrons in lithium do not depend on the mass of the ions, and that the characteristic lattice frequencies for the two pure isotopes are in the inverse ratio of the square roots of their ionic masses. A comparison with the specific heat results of Martin (1959, 1960), where the simple theory is found not to hold, indicates the possibility that anharmonic effects are present which affect the specific heat but not the electrical resistivity.

The electrical resistivity and thermoelectric power of InBi and In2Bi

1964 ◽  
Vol 25 (11) ◽  
pp. 1277-1278 ◽  
Author(s):  
G.S. Cooper ◽  
G.A. Saunders ◽  
A.W. Lawson
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Power

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

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