Electrical resistivity measurements in palladium–hydrogen alloys

1968 ◽  
Vol 46 (18) ◽  
pp. 2065-2071 ◽  
Author(s):  
C. T. Haywood ◽  
L. Verdini
Keyword(s):  
Electrical Resistivity ◽  
Transition Metals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Resistivity Measurements ◽  
Order Of Magnitude ◽  
Rate Of Cooling ◽  
High Concentrations ◽  
Pure Palladium

The resistivity of palladium and palladium–hydrogen alloys has been studied in the temperature range 2–300 °K. At low temperatures (10 °K < T < 60 °K), it is found that ρ1 is proportional to Tn with n = 3.1 for pure palladium; but n decreases to 2.3 for an alloy with H/Pd = 0.25. For high concentrations and at low temperatures, the resistivity is found to be dependent upon the time and rate of cooling through the [Formula: see text] transformation. The residual resistivity is lower for faster cooling rates.The increase in resistivity due to 1 at. % hydrogen in palladium is calculated and found to be of the same order of magnitude as that for interstitials in other f.c.c. metals, but less then that found for hydrogen in the b.c.c. transition metals tantalum and niobium at room temperature.

Electrical resistivity of gallium single crystals at low temperatures

1951 ◽  
Vol 209 (1099) ◽  
pp. 542-550 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Single Crystals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Resistivity Measurements ◽  
Characteristic Temperatures ◽  
The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

Quenching and room-temperature annealing effects on the conductivity of underdoped HoBa2Cu3O7−δ

2018 ◽  
Vol 32 (01) ◽  
pp. 1750367 ◽  
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
N. R. Vovk ◽  
Yu. I. Boiko ◽  
S. N. Kamchatnaya ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Normal State ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Phonon Scattering ◽  
Sample Volume ◽  
Residual Resistivity ◽  
Superconducting Transition ◽  
Annealing Effects

The effects of quenching from 600[Formula: see text]C and subsequent room-temperature annealing on the basal-plane electrical resistivity of underdoped HoBa2Cu3O[Formula: see text] single crystals are investigated. Regions with different superconducting transition temperatures, [Formula: see text], have been revealed in the sample after quenching and attributed to a non-uniform distribution of the labile oxygen in the sample volume. Room-temperature annealing has been revealed to lead to an increase of [Formula: see text] of all regions and a decrease of their number, attributed to the coalescence of clusters of oxygen vacancies. The temperature dependence of the resistance in the normal state is characterized by a decrease of the residual resistivity and the phonon scattering coefficient.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

Electrical Resistivity Measurements: A Sensitive Tool for Studying Aluminium Alloys

2006 ◽  
Vol 519-521 ◽  
pp. 1391-1396 ◽  
Author(s):  
B. Raeisinia ◽  
Warren J. Poole
Keyword(s):  
Electrical Resistivity ◽  
Aluminum Alloys ◽  
Aluminium Alloys ◽  
Room Temperature ◽  
Pure Aluminum ◽  
Cold Work ◽  
Resistivity Measurements ◽  
Sensitive Tool ◽  
Solute Atoms

This paper examines the challenges which are encountered when using electrical resistivity measurements for characterization of microstructures in aluminum alloys. Experimental examples are provided of electrical resistivity studies conducted on two aluminum alloys, a heattreatable alloy (AA6111) and a non-heat-treatable alloy (AA5754), which demonstrate how the technique can be used to characterize changes in the microstructure. Results on AA6111 show that the dependence of the measurement on solute atoms and fine scale precipitates makes deconvolution of the resistivity signal non-trivial and therefore, utilization of supplementary technique(s) in conjunction with electrical resistivity measurements is essential. In the next example, room temperature electrical resistivity measurements as a function of cold work for AA5754 illustrate a larger resistivity contribution from dislocations in this alloy as compared to that reported for pure aluminum. The interaction of solutes and dislocations is cited as the possible source for the increased dislocation contribution.

Heat Conductivity of Rubber at Low Temperatures

1940 ◽  
Vol 13 (4) ◽  
pp. 830-830
Author(s):  
Adolf Schallamach
Keyword(s):  
Low Temperature ◽  
Physical Properties ◽  
Temperature Region ◽  
Heat Conductivity ◽  
Low Temperatures ◽  
Room Temperature ◽  
Tire Rubber ◽  
Order Of Magnitude ◽  
Temperature Work

Abstract While examining the possibilities of applying rubber in low temperature work, we were hampered by the lack of available data on its physical properties at low temperatures. We were aware of the difficulties to be expected in making accurate measurements in that temperature region, and this applied especially to the heat conductivity, in which we were particularly interested. To obtain at least an estimate of the order of magnitude, we carried out some measurements of the heat conductivity of commercial rubber (North British tire rubber) at room temperature and at the temperature of liquid air.

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