Effect of film thickness on the physical properties of ZnO:Al thin films deposited using a spray pyrolysis technique

2008 ◽  
Vol 86 (2) ◽  
pp. 379-382 ◽  
Author(s):  
S M Rozati
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Physical Properties ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spray Method ◽  
Strong Orientation

ZnO:Al(ZAO) films with various amount of solution, in the range 10–120 mL, were prepared on a glass substrate. Deposition was carried out using a spray method, and the substrate temperature was held at 500 °C. It was found that increasing the amount of solution causes the ZnO:Al thin films to exhibit a strong orientation along (002). The variation in the structural properties due to variation in the volume of solution was investigated by means of X-ray diffraction. The lowest sheet resistance obtained was 40 Ω/cm2 for a 120 mL solution. PACS Nos.: 73.61.–r, 78.20.–e

Morphological and Structural Study of Nanostructured Tin Dioxide (SnO2) Thin Films by Spray Pyrolysis

2012 ◽  
Vol 626 ◽  
pp. 672-676
Author(s):  
Boon Hoong Ong ◽  
Heng Choy Lee ◽  
Sharifah Bee Abdul Hamid
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Tin Dioxide ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Spray

Nanostructured SnO2 thin films were deposited on glass substrate using chemical spray pyrolysis technique. Three influent synthesis parameters, namely (i) the precursor concentration (0.2M and 0.5M), (ii) the substrate temperature (250°C and 350°C) and (iii) doping with zinc (Zn) were investigated in term of their effects on the morphology and structure of SnO2 thin films. These films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectrometry (EDX) techniques. The grain size of the films was observed to increase as the concentration of the precursors is increased. Substrate temperature is proved to be crucial in determining the crystallinity of the films as the films are reported to grow at temperature above 270°C. Besides, the addition of dopant was found to reduce the grain size of the film.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

scholarly journals Electrical and Structural properties of Copper Oxide (CuO) thin films on Plastic substrate deposited by spray pyrolysis technique

2019 ◽  
Vol 7 (2) ◽  
pp. 14-18 ◽  
Author(s):  
Mohammad G. Faraj ◽  
Askander K. Kaka ◽  
Halo D. Omar
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Hall Effect ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements

In this paper, copper oxide (CuO) thin films were deposited on polyimide (PI) Plastic substrates with spray pyrolysis technique with different temperatures (i.e. 250–300 °C). All the deposited films were characterized by X-ray diffraction (XRD) and Hall Effect measurements for the Structural and electrical properties. Effects of substrate temperature on the structural and electrical characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of CuO films have a face centered cubic structure. The crystallite grain size was calculated using Scherrer formula and it is found that the substrate temperature (300 0C) has maximum crystallite grain size (81.2 nm). Hall Effect measurements showed that all the films are of p-type conductivity. Depending on the substrate temperature, Hall measurement showed that the electrical resistivity and the carrier concentration varied in the range 77.4 Ω.cm to 52.7 Ω.cm and  6.3 x1015 cm-3 to  10.1 x1015 cm-3.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals X-ray Diffraction Investigation of Stainless Steel—Nitrogen Thin Films Deposited Using Reactive Sputter Deposition

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 984
Author(s):  
Faisal I. Alresheedi ◽  
James E. Krzanowski
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Peak Shift ◽  
304 Stainless Steel ◽  
Tetragonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Calculated Parameter

An X-ray diffraction investigation was carried out on nitrogen-containing 304 stainless steel thin films deposited by reactive rf magnetron sputtering over a range of substrate temperature and bias levels. The resulting films contained between ~28 and 32 at.% nitrogen. X-ray analysis was carried out using both the standard Bragg-Brentano method as well as area-detector diffractometry analysis. The extent of the diffraction anomaly ((002) peak shift) was determined using a calculated parameter, denoted RB, which is based on the (111) and (002) peak positions. The normal value for RB for FCC-based structures is 0.75 but increases as the (002) peak is anomalously displaced closer to the (111) peak. In this study, the RB values for the deposited films were found to increase with substrate bias but decrease with substrate temperature (but still always >0.75). Using area detector diffractometry, we were able to measure d111/d002 values for similarly oriented grains within the films, and using these values calculate c/a ratios based on a tetragonal-structure model. These results allowed prediction of the (002)/(200) peak split for tetragonal structures. Despite predicting a reasonably accessible split (~0.6°–2.9°–2θ), no peak splitting observed, negating the tetragonal-structure hypothesis. Based on the effects of film bias/temperature on RB values, a defect-based hypothesis is more viable as an explanation for the diffraction anomaly.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

SnO2:F Thin Films with High Fluorine Contents Produced by Spray Pyrolysis at Constant Substrate Temperature

1996 ◽  
Vol 441 ◽  
Author(s):  
D. R. Acosta ◽  
E. Zironi ◽  
W. Estrada ◽  
E. Montoya
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Structural Parameters ◽  
Final Concentration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray

AbstractFluorine doped tin oxide thin films were prepared from solutions with high fluorine contents using the spray pyrolysis technique; the resulting films were studied by electron and X-ray diffraction methods; the resonant nuclear reaction (RNR) method was used to determine the final concentration of fluorine atoms in our films for different doping levels. Also, electrical and optical properties of SnO2:F films were measured and correlated with deposition and structural parameters obtained from X-Ray diffraction and electron microscopy studies.

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