Nature of a temperature hysteresis of effective shear modulus in single-crystal silicon

2005 ◽  
Vol 39 (7) ◽  
pp. 735-737 ◽  
Author(s):  
A. V. Oleinich-Lysyuk ◽  
B. I. Gutsulyak ◽  
I. M. Fodchuk
Keyword(s):  
Shear Modulus ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Temperature Hysteresis ◽  
Crystal Silicon ◽  
Effective Shear Modulus

Internal friction and effective shear modulus of single-crystal silicon in early stages of oxygen precipitation

2002 ◽  
Vol 36 (9) ◽  
pp. 962-965
Author(s):  
V. V. Motskin ◽  
A. V. Oleinich-Lysyuck ◽  
N. D. Raranskii ◽  
I. M. Fodchuk
Keyword(s):  
Internal Friction ◽  
Shear Modulus ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Effective Shear Modulus ◽  
Early Stages ◽  
Oxygen Precipitation

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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