Investigation of roughness cross correlation in a Ni/C multilayer mirror by X-ray diffuse scattering method

2003 ◽  
Vol 97 (6) ◽  
pp. 1201-1211
Author(s):  
N. V. Kovalenko ◽  
S. V. Mytnichenko ◽  
V. A. Chernov
Keyword(s):  
Diffuse Scattering ◽  
Cross Correlation ◽  
Scattering Method ◽  
X Ray ◽  
Multilayer Mirror

scholarly journals Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals

2018 ◽  
Vol 4 (4) ◽  
pp. 125-134
Author(s):  
Vladimir T. Bublik ◽  
Marina I. Voronova ◽  
Kirill D. Shcherbachev
Keyword(s):  
Diffuse Scattering ◽  
Reciprocal Lattice ◽  
Lattice Parameter ◽  
Formation Mechanisms ◽  
Scattering Method ◽  
X Ray ◽  
Semiconductor Crystals ◽  
The Matrix ◽  
Decomposition Stages ◽  
Defects Analysis

The capabilities of X-ray diffuse scattering (XRDS) method for the study of microdefects in semiconductor crystals have been overviewed. Analysis of the results has shown that the XRDS method is a highly sensitive and information valuable tool for studying early stages of solid solution decomposition in semiconductors. A review of the results relating to the methodological aspect has shown that the most consistent approach is a combination of XRDS with precision lattice parameter measurements. It allows one to detect decomposition stages that cannot be visualized using transmission electron microscopy (TEM) and moreover to draw conclusions as to microdefect formation mechanisms. TEM-invisible defects that are coherent with the matrix and have smeared boundaries with low displacement field gradients may form due to transmutation doping as a result of neutron irradiation and relaxation of disordered regions accompanied by redistribution of point defects and annihilation of interstitial defects and vacancies. For GaP and InP examples, a structural microdefect formation mechanism has been revealed associated with the interaction of defects forming during the decomposition and residual intrinsic defects. Analysis of XRDS intensity distribution around the reciprocal lattice site and the related evolution of lattice constant allows detecting different decomposition stages: first, the formation of a solution of Frenkel pairs in which concentration fluctuations develop, then the formation of matrix-coherent microdefects and finally coherency violation and the formation of defects with sharp boundaries. Fundamentally, the latter defects can be precipitating particles. Study of the evolution of diffuse scattering iso-intensity curves in GaP, GaAs(Si) and Si(O) has allowed tracing the evolution of microdefects from matrix-coherent ones to microdefects with smeared coherency resulting from microdefect growth during the decomposition of non-stoichiometric solid solutions heavily supersaturated with intrinsic (or impurity) components.

X-ray diffuse scattering from HMTA: analysis via a Monte Carlo model

2008 ◽  
Vol 64 (4) ◽  
pp. 456-465 ◽  
Author(s):  
D. J. Goossens ◽  
A. P. Heerdegen ◽  
T. R. Welberry
Keyword(s):  
Monte Carlo ◽  
Azelaic Acid ◽  
Diffuse Scattering ◽  
Cross Correlation ◽  
Monte Carlo Model ◽  
Limited Range ◽  
Thermally Induced ◽  
X Ray ◽  
Zero Correlation ◽  
Average Position

Hexamethylenetetramine (HMT, C6H12N4, also referred to as urotropin) and azelaic acid [A, HOOC—(CH2)7—COOH] form a co-crystal or adduct (HMTA, also referred to as urotropin azelate) which exhibits several structural phases as a function of temperature. At room temperature, the structure is orthorhombic, but shows substantial disorder. Here, this disorder is explored by analyzing the diffuse scattering from single crystals of HMTA via Monte Carlo simulation. The disorder is in part occupational, with two orientations of azelaic acid occurring, and in part thermally induced, which is to say dynamic. The occupational disorder can be thought of as a combination of limited-range in-plane (bc plane) negative correlations combined with effectively zero correlation between planes (along a), rather like stacking faults. Size effect, the cross-correlation between molecular orientation and displacement from average position, is required to reproduce the observed diffuse scattering.

Defect structure of zinc doped silicon studied by X-ray diffuse scattering method

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4630-4633 ◽  
Author(s):  
Kirill D. Shcherbachev ◽  
Vladimir V. Privezentsev
Keyword(s):  
Defect Structure ◽  
Diffuse Scattering ◽  
Scattering Method ◽  
X Ray ◽  
Doped Silicon

Defect structure of zinc doped silicon studied by X-ray diffuse scattering method

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4630-4633
Author(s):  
Kirill D. Shcherbachev ◽  
Vladimir V. Privezentsev
Keyword(s):  
Defect Structure ◽  
Diffuse Scattering ◽  
Scattering Method ◽  
X Ray ◽  
Doped Silicon
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