Picosecond high-voltage drift diodes based on gallium arsenide

2003 ◽  
Vol 37 (12) ◽  
pp. 1425-1427 ◽  
Author(s):  
A. V. Rozhkov ◽  
V. A. Kozlov
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Voltage Drift

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method

1993 ◽  
Vol 36 (12) ◽  
pp. 1749-1755 ◽  
Author(s):  
G. Ashkinazi ◽  
Tz. Hadas ◽  
B. Meyler ◽  
M. Nathan ◽  
L. Zolotarevski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
High Voltage ◽  
Liquid Phase Epitaxy ◽  
Device Characterization

scholarly journals Photoresistors made of CdхHg1-хTematerial(a review)

2021 ◽  
Vol 9 (2) ◽  
pp. 112-127
Keyword(s):  
Gallium Arsenide ◽  
Solid Solutions ◽  
High Voltage ◽  
Power Output ◽  
Liquid Nitrogen Temperature ◽  
Charge Carriers ◽  
Specific Detection ◽  
Domestic Technology ◽  
A Value ◽  
Highly Sensitive

The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

Latest advances in high voltage, drift free, 4H-SiC PiN diodes

2004 ◽  
Author(s):  
M.K. Dus ◽  
J.J. Sumakeris ◽  
S. Krishnaswami ◽  
M.J. Paisley ◽  
A.K. Agarwal ◽  
...  
Keyword(s):  
High Voltage ◽  
Pin Diodes ◽  
Voltage Drift
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