Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

N. E. Islam; E. Schamiloglu; C. B. Fleddermann; J. S. H. Schoenberg; R. P. Joshi

doi:10.1063/1.370958

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

Journal of Applied Physics ◽

10.1063/1.370958 ◽

1999 ◽

Vol 86 (3) ◽

pp. 1754-1758 ◽

Cited By ~ 21

Author(s):

N. E. Islam ◽

E. Schamiloglu ◽

C. B. Fleddermann ◽

J. S. H. Schoenberg ◽

R. P. Joshi

Keyword(s):

Gallium Arsenide ◽

High Voltage ◽

High Power ◽

Photoconductive Switches

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Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

Plasma Science and Technology ◽

10.1088/1009-0630/13/6/07 ◽

2011 ◽

Vol 13 (6) ◽

pp. 672-675 ◽

Cited By ~ 1

Author(s):

Ming Xu ◽

Wei Shi ◽

Zenggong Jiang ◽

Shaoqiang Wang ◽

Zhanglong Fu

Keyword(s):

Gallium Arsenide ◽

Experimental Research ◽

High Power ◽

Surface Flashover ◽

Photoconductive Switches

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Improved hold-off characteristics of gallium arsenide photoconductive switches used in high power applications

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358) ◽

10.1109/ppc.1999.825474 ◽

2003 ◽

Cited By ~ 7

Author(s):

N.E. Islam ◽

E. Schamiloglu ◽

C.B. Fleddermann ◽

J.S.H. Schoenberg ◽

R.P. Joshi

Keyword(s):

Gallium Arsenide ◽

High Power ◽

Photoconductive Switches

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Development and testing of a high voltage direct converter for high power RF applications

IET Pulsed Power Symposium 2006 ◽

10.1049/ic:20060095 ◽

2006 ◽

Cited By ~ 2

Author(s):

D.J. Cook ◽

J.C. Clare ◽

P.W. Wheeler

Keyword(s):

High Voltage ◽

High Power ◽

Rf Applications

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Research on insulation protection of high voltage and high power confluence structure of aerospace based on electric field simulation

2021 International Conference on Electronics, Circuits and Information Engineering (ECIE) ◽

10.1109/ecie52353.2021.00010 ◽

2021 ◽

Author(s):

Zhang Yu ◽

Zhang Guoshuai ◽

Wu Jianchao ◽

Pei Xingzheng

Keyword(s):

Electric Field ◽

High Voltage ◽

High Power ◽

Field Simulation

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High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽

10.3390/ma14051228 ◽

2021 ◽

Vol 14 (5) ◽

pp. 1228

Author(s):

Marcin Winnicki ◽

Artur Wiatrowski ◽

Michał Mazur

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Voltage ◽

High Power ◽

Power Supply ◽

Indium Tin Oxide ◽

Volume Ratio ◽

Cold Spraying ◽

High Voltage Power Supply ◽

Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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