Polyol-Made Spinel Ferrite Nanoparticles—Local Structure and Operating Conditions: NiFe2O4 as a Case Study

We report the effect of a polyol-mediated annealing on nickel ferrite nanoparticles. By combining X-ray fluorescence spectroscopy, X-ray diffraction, and 57Fe Mössbauer spectrometry, we showed that whereas the as-prepared nanoparticles (NFO) are stoichiometric, the annealed ones (a-NFO) are not, since Ni0-based crystals precipitate. Nickel depletion from the spinel lattice and reduction in the polyol solvent are accompanied with an important cation migration. Indeed, thanks to Mössbauer hyperfine structure analysis, we evidenced that the cation distribution in NFO departs from the thermodynamically stable inverse spinel structure with a concentration of tetrahedrally coordinated Ni2+ of 20 wt-% (A sites). After annealing, and nickel demixing, originated very probably from the A sites of NFO lattice, the spinel phase accommodates with cation and anion vacancies, leading to the (Fe3+0.84□0.16)A[Ni2+0.80Fe3+1.16□0.04]BO4-0.20 formula, meaning that the applied polyol-mediated treatment is not so trivial.

Challenges in Improving Performance of Oxide Thermoelectrics Using Defect Engineering

Oxide thermoelectric materials are considered promising for high-temperature thermoelectric applications in terms of low cost, temperature stability, reversible reaction, and so on. Oxide materials have been intensively studied to suppress the defects and electronic charge carriers for many electronic device applications, but the studies with a high concentration of defects are limited. It desires to improve thermoelectric performance by enhancing its charge transport and lowering its lattice thermal conductivity. For this purpose, here, we modified the stoichiometry of cation and anion vacancies in two different systems to regulate the carrier concentration and explored their thermoelectric properties. Both cation and anion vacancies act as a donor of charge carriers and act as phonon scattering centers, decoupling the electrical conductivity and thermal conductivity.

Phase-transition–induced p-n junction in single halide perovskite nanowire

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.

Piezoelectric Behavior Based on Mixing-Doped in Lead Zirconate Titanate Ceramics and Application

In this investigation, we extend our previous works to improve piezoelectric properties of Pb(Zr,Ti)O3 ceramics. Modified lead zirconate titanate (PZT) piezoceramics with a composition Zr/Ti=53/47 containing a trace of mixing dopants were prepared by conventional ceramic technology sintering powder compacts. Replacement of (Zr, Ti)+4 by Nb+5, Pb+2 by Sb+3 and Mn+4 in PZT perovskite type solid solutions was accomplished by the creation of cation and anion vacancies. Modified ceramics were explored as a function of firing temperature to acquire exceedingly good piezoelectric characterizations. From the analysis results, calcined at 850°C for 2 h, and then sintered at 1280°C for 2 h, PZT piezoceramic showed the larger dielectric constant er 2013, mechanical quality factor Qm 120 and maximum electromechanical coupling factor kp 0.67. Besides, the bulk ceramic grains distribution were found to be uniform. Furthermore, the sample was found to possess piezoelectric properties, the resonance frequency being about 200 KHz suitable for acoustic sensor.

The Effect of (Ba,Sr) and (Mn,Fe,W) Dopants on the Microwave Properties of BaxSr1−xTiO3 Thin Films

Single phase BaxSr1−xTiO3 (x=0.5 and 0.6) thin films (∼5000Å thick) have been deposited onto (100) MgO single crystal substrate with (Ba,Sr) compensated and/or (Mn,Fe,W) doped targets using pulsed laser deposition (PLD). The room temperature capacitance (C) and dielectric Q (1/tanδ) have been measured at microwave frequencies of I to 20 GHz as a function of electric field (0-80kV/cm). Microstructural defects associated with cation and anion vacancies have been observed in BaxSr1−xTiO3 films. Compensation of the ablation target with excess Ba and Sr tends to increase the dielectric constant and the dielectric Q. A film deposited with (Ba,Sr) compensated target has been obtained with 25% tuning, where % tuning is defined as {(C(0)-C(E))/C(O))×100, and dielectric Q of ∼ 100 at room temperature (1 — 10 GHz) for DC bias field (E=67 kV/cm). A further increase in the dielectric Q is observed by the addition of donor/acceptor dopants such as Mn, Fe, and W (Q≈100-240). The effects of (Ba, Sr) compensation and (Mn,Fe,W) doping on the film structure and dielectric properties are discussed.