The role of thermally activated processes in the formation of magnetosensitive point-defect complexes in NaCl: Eu single crystals

2003 ◽  
Vol 45 (2) ◽  
pp. 270-275
Author(s):  
R. B. Morgunov ◽  
A. A. Baskakov ◽  
I. N. Trofimova ◽  
D. V. Yakunin
Keyword(s):  
Point Defect ◽  
Single Crystals ◽  
Defect Complexes ◽  
Thermally Activated ◽  
Activated Processes

Implanted Dopant-Defect Interactons in GaAs

1987 ◽  
Vol 93 ◽  
Author(s):  
S. J. Pearton ◽  
J. S. Williams ◽  
K. T. Short ◽  
S. T. Johnson ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Point Defect ◽  
Fine Scale ◽  
Furnace Annealing ◽  
Defect Complexes ◽  
Implantation Temperature ◽  
Scale Point ◽  
Peak Value

ABSTRACTThe implantation temperature dependence of dopant solubility and electrical activity was investigated for Sn, Cd and Te ions in GaAs. Implantation doses of 5×1012 – 5×1015 cm−2 were performed in the temperature range from LN2 to 400°C, followed by rapid thermal annealing (950°C) or furnace annealing between 650°C and 850°C. Solubilities above 1020 cm−3 were obtained for all of the species, with a peak value of 2.5×1021 cm−3 for Te after 850°C furnace annealing. However essentially no correlation existed between dopant solubility and electrical activity or between electrical activity and the high density of defects remaining after many of the annealing cycles. This emphases the role of fine scale, point defect complexes in controlling the electrical activity of implanted dopants in GaAs.

Effect of grain size on the vapour phase hydration of monoclinic and triclinic modifications of tricalcium silicate; role of high temperature activation

1991 ◽  
Vol 56 (10) ◽  
pp. 1993-2008
Author(s):  
S. Hanafi ◽  
G. M. S. El-Shafei ◽  
B. Abd El-Hamid
Keyword(s):  
Particle Size ◽  
Vapour Phase ◽  
Tricalcium Silicate ◽  
Active Centers ◽  
Thermally Activated ◽  
Grain Sizes ◽  
Intermediate Size ◽  
Surface Active ◽  
Temperature Activation

The hydration of tricalcium silicate (C3S) with three grain sizes of monoclinic (M) and triclinic (T) modifications and on their thermally activated samples were investigated by exposure to water vapour at 80°C for 60 days. The products were investigated by XRD, TG and N2 adsorption. The smaller the particle size the greater was the hydration for both dried and activated samples from (M). In the activated samples a hydrate with 2θ values of 38.4°, 44.6° and 48.6° could be identified. Hydration increased with particle size for the unactivated (T) samples but after activation the intermediate size exhibited enhanced hydration. Thermal treatment at 950°C of (T) samples increased the surface active centers on the expense of those in the bulk. Changes produced in surface texture upon activation and/or hydration are discussed.

scholarly journals Modeling of magneto-conductivity of bismuth selenide: a topological insulator

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystals ◽  
X Ray Diffraction ◽  
Field Range ◽  
X Ray ◽  
Bulk Carriers ◽  
Different Temperatures

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).

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