High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

2002 ◽  
Vol 36 (11) ◽  
pp. 1315-1321 ◽  
Author(s):  
S. S. Mikhrin ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
A. P. Vasil’ev ◽  
...  
2000 ◽  
Vol 11 (4) ◽  
pp. 397-400 ◽  
Author(s):  
V M Ustinov ◽  
A E Zhukov ◽  
A R Kovsh ◽  
S S Mikhrin ◽  
N A Maleev ◽  
...  

2003 ◽  
Vol 48 (1) ◽  
pp. 131-132 ◽  
Author(s):  
E. Yu. Lundina ◽  
Yu. M. Shernyakov ◽  
M. V. Maksimov ◽  
I. N. Kayander ◽  
A. F. Tsatsul’nikov ◽  
...  

Author(s):  
N.A. Maleev ◽  
A.R. Kovsh ◽  
A.E. Zhukov ◽  
S.S. Mikhrin ◽  
A.P. Vasil'ev ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1201
Author(s):  
Dan Dalacu ◽  
Philip J. Poole ◽  
Robin L. Williams

For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.


2016 ◽  
Vol 4 (21) ◽  
pp. 8161-8171 ◽  
Author(s):  
Chandu V. V. M. Gopi ◽  
Mallineni Venkata-Haritha ◽  
Young-Seok Lee ◽  
Hee-Je Kim

Metal sulfide decorated with ZnO NRs (ZnO/CoS, ZnO/NiS, ZnO/CuS and ZnO/PbS) were fabricated and used as efficient CEs for QDSSCs.


Author(s):  
A. Vainionpaa ◽  
S. Suomalainen ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  

2015 ◽  
Vol 169 ◽  
pp. 103-108 ◽  
Author(s):  
Ling Li ◽  
Junying Xiao ◽  
Xichuan Yang ◽  
Wenming Zhang ◽  
Huayan Zhang ◽  
...  

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