Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates

2005 ◽  
Author(s):  
C. Moller
Keyword(s):  
Quantum Dot ◽  
Single Mode ◽  
Long Wavelength ◽  
Gaas Substrates

Long-wavelength quantum dot lasers on GaAs substrates

2000 ◽  
Vol 11 (4) ◽  
pp. 397-400 ◽  
Author(s):  
V M Ustinov ◽  
A E Zhukov ◽  
A R Kovsh ◽  
S S Mikhrin ◽  
N A Maleev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates

2003 ◽  
Vol 48 (1) ◽  
pp. 131-132 ◽  
Author(s):  
E. Yu. Lundina ◽  
Yu. M. Shernyakov ◽  
M. V. Maksimov ◽  
I. N. Kayander ◽  
A. F. Tsatsul’nikov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Long Wavelength ◽  
Term Stability ◽  
Long Term Stability ◽  
Gaas Substrates

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

2002 ◽  
Vol 36 (11) ◽  
pp. 1315-1321 ◽  
Author(s):  
S. S. Mikhrin ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

Metamorphic growth of long-wavelength saturable absorber on GaAs substrates

2005 ◽  
Author(s):  
A. Vainionpaa ◽  
S. Suomalainen ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Long Wavelength ◽  
Gaas Substrates

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

KONDO EFFECT AND SPIN-CHARGE SEPARATION IN QUANTUM DOTS

2001 ◽  
Vol 15 (10n11) ◽  
pp. 1426-1442
Author(s):  
L. I. GLAZMAN ◽  
F. W. J. HEKKING ◽  
A. I. LARKIN
Keyword(s):  
Quantum Dot ◽  
Charge Separation ◽  
Coulomb Blockade ◽  
Kondo Effect ◽  
Broad Band ◽  
Single Mode ◽  
Kondo Temperature ◽  
Average Charge ◽  
Opposite Case ◽  
Anderson Impurity Model

The Kondo effect in a quantum dot is discussed. In the standard Coulomb blockade setting, tunneling between the dot and the leads is weak, the number of electrons in the dot is well-defined and discrete; the Kondo effect may be considered in the framework of the conventional one-level Anderson impurity model. It turns out however, that the Kondo temperature TK in the case of weak tunneling is extremely low. In the opposite case of almost reflectionless single-mode junctions connecting the dot to the leads, the average charge of the dot is not discrete. Surprisingly, its spin may remain quantized: s=1/2 or s=0, depending (periodically) on the gate voltage. Such a "spin-charge separation" occurs because, unlike an Anderson impurity, a quantum dot carries a broad-band, dense spectrum of discrete levels. In the doublet state, the Kondo effect develops with a significantly enhanced TK. Like in the weak-tunneling regime, the enhanced TK exhibits strong mesoscopic fluctuations. The statistics of the fluctuations is universal, and related to the Porter-Thomas statistics of the wave function fluctuations.

Optical Characterization of CdSe Colloidal Quantum Dot/ MEH-PPV Polymer Nanocomposites Spin-cast on GaAs Substrates

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optoelectronic Devices ◽  
Photogenerated Electron ◽  
Polymer Nanocomposite ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Gaas Substrates ◽  
Conducting Polymer Nanocomposite ◽  
Colloidal Quantum Dot

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Long Wavelength ◽  
Continuous Wave Operation
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