The influence of sinks of intrinsic point defects on phosphorus diffusion in Si

2002 ◽  
Vol 36 (11) ◽  
pp. 1260-1266
Author(s):  
O. V. Aleksandrov
1999 ◽  
Vol 568 ◽  
Author(s):  
Ant Ural ◽  
Peter B. Griffin ◽  
James D. Plummer

ABSTRACTSelf-diffusion in silicon has been studied using epitaxially grown isotopically enriched structures under nonequilibrium concentrations of intrinsic point defects created by thermal oxidation and nitridation. Comparison of identical anneals for self, antimony, and phosphorus diffusion in silicon enables us to determine bounds on the fractional contributions of microscopic mechanisms for Si self-diffusion in the temperature range 800–1100°C. We obtain direct experimental evidence for a dual vacancy-interstitial mechanism of self-diffusion in silicon and show that the fractional contribution of each mechanism has a weak dependence on temperature.


Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  

2002 ◽  
Vol 389-393 ◽  
pp. 471-476 ◽  
Author(s):  
M. Bockstedte ◽  
Matthias Heid ◽  
Alexander Mattausch ◽  
Oleg Pankratov

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