Measurements of deep trap concentration in diodes with a high Schottky barrier by deep-level transient spectroscopy

2002 ◽  
Vol 36 (6) ◽  
pp. 655-658
Author(s):  
E. N. Agafonov ◽  
A. N. Georgobiani ◽  
L. S. Lepnev
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Trap ◽  
Trap Concentration ◽  
Transient Spectroscopy

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

1986 ◽  
Vol 71 ◽  
Author(s):  
K. Nauka ◽  
Jun Amano ◽  
M.P. Scott ◽  
E.R. Weber ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Analytical Techniques ◽  
Deep Trap ◽  
Junction Region ◽  
Leakage Currents ◽  
Junction Diode ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

scholarly journals Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CG01 ◽  
Author(s):  
Philippe Ferrandis ◽  
Matthew Charles ◽  
Yannick Baines ◽  
Julien Buckley ◽  
Gennie Garnier ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Gate Recess

Deep Trap Measurement inHg1-xCdxTeby Isothermal Capacitance and Deep-Level Transient Spectroscopy

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3374-3375
Author(s):  
Koji Sato ◽  
Katsuhiko Suno ◽  
Hideo Wada ◽  
Yoichi Okamoto ◽  
Jun Morimoto ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Trap ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy Study of Dislocations in SiGe/Si Heterostructures

2007 ◽  
Vol 994 ◽  
Author(s):  
Jinggang Lu ◽  
Yongkook Park ◽  
George A Rozgonyi
Keyword(s):  
Electrical Activity ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Trap Concentration ◽  
Intrinsic Point Defects ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
Fe Impurities

AbstractExamination of dislocations in the as-grown and annealed SiGe/Si heterostructures by DLTS indicates the three strong DLTS bands from 70 to 270K in the as-grown sample are likely related to intrinsic point defects or dislocation trails. A small amount of Fe at dislocations dramatically increases their electrical activity, and the trap concentration due to Fe-decorated dislocations can well exceed the total Fe impurities presented along dislocations. Through examining the competitive trapping of Fe at boron and dislocations, it is suggested that Fe trapping only happens at disordered sites along dislocations, such as kinks.

Sign in / Sign up

Export Citation Format

Share Document