scholarly journals Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

2007 ◽  
Vol 102 (11) ◽  
pp. 113702 ◽  
Author(s):  
S. A. Reshanov ◽  
G. Pensl ◽  
K. Danno ◽  
T. Kimoto ◽  
S. Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Deep Level Transient Spectroscopy ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
Tsunenobu Kimoto ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Peak Height ◽  
Quasi Fermi Level ◽  
Transient Spectroscopy

The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.

Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy

1988 ◽  
Vol 64 (5) ◽  
pp. 2469-2472 ◽  
Author(s):  
Q. Y. Ma ◽  
M. T. Schmidt ◽  
X. Wu ◽  
H. L. Evans ◽  
E. S. Yang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Deep Level Transient Spectroscopy ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CG01 ◽  
Author(s):  
Philippe Ferrandis ◽  
Matthew Charles ◽  
Yannick Baines ◽  
Julien Buckley ◽  
Gennie Garnier ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Gate Recess

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 47-52 ◽  
Author(s):  
Eddy Simoen ◽  
K. Opsomer ◽  
Cor Claeys ◽  
Karen Maex ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Current ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Deep Acceptor ◽  
Transient Spectroscopy

In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no traps have been found for germanidation temperatures up to 500 oC, suggesting that in both cases no marked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deep acceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe can be detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levels belonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reverse current of the Schottky barriers increases with TRTA, while the barrier height is also strongly affected.

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