Mechanisms of heteroepitaxial growth of cadmium telluride thin films in a thermal field of a temperature gradient

2001 ◽  
Vol 43 (4) ◽  
pp. 778-782 ◽  
Author(s):  
A. P. Belyaev ◽  
V. P. Rubets ◽  
M. Yu. Nuzhdin ◽  
I. P. Kalinkin
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Cadmium Telluride ◽  
Thermal Field ◽  
Heteroepitaxial Growth

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

From thin films to shaped platelets: effects of temperature gradient on SnS synthesis

2020 ◽  
pp. 138507
Author(s):  
Thiago Carvalho ◽  
Myriano H. Oliveira ◽  
R. Magalhães-Paniago ◽  
Andre Santarosa Ferlauto
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Effects Of Temperature

scholarly journals In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

1997 ◽  
Vol 502 ◽  
Author(s):  
Dave H. A. Blank ◽  
Horst Rogalla
Keyword(s):  
Thin Films ◽  
High Pressures ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
High Energy ◽  
Diagnostic Tools ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

scholarly journals Correction: Study on the efficient PV/TE characteristics of the self-assembled thin films based on bismuth telluride/cadmium telluride

RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39685-39685
Author(s):  
Vivekanandan Raman ◽  
Dinah Punnoose ◽  
Pari Baraneedharan ◽  
Sunkara Srinivasa Rao ◽  
Chandu V. V. M. Gopi ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Telluride ◽  
Bismuth Telluride ◽  
The Self ◽  
Self Assembled

Correction for ‘Study on the efficient PV/TE characteristics of the self-assembled thin films based on bismuth telluride/cadmium telluride’ by Vivekanandan Raman et al., RSC Adv., 2017, 7, 6735–6742.

Effects of adatom mobility and Ehrlich–Schwoebel barrier on heteroepitaxial growth of scandium nitride (ScN) thin films

2020 ◽  
Vol 117 (21) ◽  
pp. 212101
Author(s):  
Dheemahi Rao ◽  
Bidesh Biswas ◽  
Shashidhara Acharya ◽  
Vijay Bhatia ◽  
Ashalatha Indiradevi Kamalasanan Pillai ◽  
...  
Keyword(s):  
Thin Films ◽  
Heteroepitaxial Growth ◽  
Scandium Nitride

scholarly journals Directional crystallization of C8-BTBT-C8 thin films in a temperature gradient

2021 ◽  
Vol 5 (1) ◽  
pp. 249-258
Author(s):  
Guillaume Schweicher ◽  
Guangfeng Liu ◽  
Pierre Fastré ◽  
Roland Resel ◽  
Mamatimin Abbas ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Directional Crystallization ◽  
Film Roughness

A directional crystallization of C8-BTBT-C8 in a temperature gradient reduces film roughness and improves in-plane alignment.

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