scholarly journals Directional crystallization of C8-BTBT-C8 thin films in a temperature gradient

2021 ◽  
Vol 5 (1) ◽  
pp. 249-258
Author(s):  
Guillaume Schweicher ◽  
Guangfeng Liu ◽  
Pierre Fastré ◽  
Roland Resel ◽  
Mamatimin Abbas ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Directional Crystallization ◽  
Film Roughness

A directional crystallization of C8-BTBT-C8 in a temperature gradient reduces film roughness and improves in-plane alignment.

From thin films to shaped platelets: effects of temperature gradient on SnS synthesis

2020 ◽  
pp. 138507
Author(s):  
Thiago Carvalho ◽  
Myriano H. Oliveira ◽  
R. Magalhães-Paniago ◽  
Andre Santarosa Ferlauto
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Effects Of Temperature

Activated Pulsed Metalorganic Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films Using Alkyl Precursors

2010 ◽  
Vol 1251 ◽  
Author(s):  
Denis Reso ◽  
Mindaugas Silinskas ◽  
Bodo Kalkofen ◽  
Marco Lisker ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Catalytic Method ◽  
Deposition Parameters ◽  
Film Roughness ◽  
Temperature And Pressure

AbstractGe-Sb-Te (GST) thin films were deposited by chemical vapor deposition (CVD) and hot-wire chemical vapor deposition (HW CVD). Several precursor sets (tetraethylgermanium - trimethylantimony - dimethyltellurium (TEGe-TMSb-DMTe), tetraisopropylgermanium - triisopropylantimony - di-tertiarybutyltellurium (TiPGe-TiPSb-DtBTe) and tetraallylgermanium - triisopropylantimony - diisopropyltellurium (TAGe-TiPSb-DiPTe)) were tested for CVD. For the TEGe-TMSb-DMTe precursor set tellurium and germanium could be detected in the films for all deposition temperatures investigated, while Sb was found only in the films deposited at elevated temperature higher than 550 °C. The deposition temperature could be reduced by using two other precursor sets (TiPGe-TiPSb-DtBTe and TAGe-TiPSb-DiPTe). The Ge content, however, could not be sufficiently increased to obtain stoichiometric Ge2Sb2Te5 films. Therefore, the hot wire or catalytic method was applied to improve the decomposition of the precursors. In this case, the desired composition (e.g. Ge2Sb2Te5) was obtained at each investigated temperature by adjusting dosing and deposition parameters. Additionally, film roughness (as low as 2 nm) and deposition rates could be optimized by adjusting deposition temperature and pressure.

scholarly journals Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

2018 ◽  
Vol 60 (5) ◽  
pp. 888
Author(s):  
М.Л. Лунина ◽  
Л.С. Лунин ◽  
В.В. Калинчук ◽  
А.Е. Казакова
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Liquid Phase ◽  
Temperature Gradient ◽  
Growth Kinetics ◽  
Luminescence Properties ◽  
Structural Perfection ◽  
Gasb Substrate

AbstractThe thin-film In_ x Al_ y Ga_1 – x – y As_ z Sb_1 – z /GaSb heterostructures have been grown from liquid phase in a temperature gradient. The growth kinetics, the composition, the structural perfection, and the luminescence properties of the InAlGaAsSb thin films grown on a GaSb substrate have been studied.

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO SYNTHESIZED BY TEMPERATURE GRADIENT THERMAL OXIDATION

2010 ◽  
Vol 17 (05n06) ◽  
pp. 497-503 ◽  
Author(s):  
F. K. YAM ◽  
S. S. TNEH ◽  
Y.-Q. CHAI ◽  
W. S. LAU ◽  
Z. HASSAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Temperature Gradient ◽  
Thermal Oxidation ◽  
Optical Quality ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Fixed Temperature

In this work, a series of polycrystalline ZnO samples have been synthesized from Zn thin films deposited on Si (100) substrates by using thermal oxidation technique. The ZnO thin film samples grown by this technique were then characterized by a variety of structural and optical characterization tools. The results revealed that the use of novel annealing process i.e. the application of temperature gradient in the thermal treatment could enhance the structural and optical quality of the ZnO thin films significantly as compared to the normal annealing process, i.e. a fixed temperature under different durations. Apart from the improvement of structural and optical properties of ZnO thin films, another striking feature of this novel annealing process was the promotion of the growth of ZnO nanostructures.

Toward Single Crystal Thin Films of Terthiophene by Directional Crystallization Using a Thermal Gradient

2011 ◽  
Vol 11 (8) ◽  
pp. 3663-3672 ◽  
Author(s):  
Guillaume Schweicher ◽  
Nicolas Paquay ◽  
Claire Amato ◽  
Roland Resel ◽  
Markus Koini ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Thermal Gradient ◽  
Directional Crystallization

Mechanisms of heteroepitaxial growth of cadmium telluride thin films in a thermal field of a temperature gradient

2001 ◽  
Vol 43 (4) ◽  
pp. 778-782 ◽  
Author(s):  
A. P. Belyaev ◽  
V. P. Rubets ◽  
M. Yu. Nuzhdin ◽  
I. P. Kalinkin
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Cadmium Telluride ◽  
Thermal Field ◽  
Heteroepitaxial Growth
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