Electrical properties of cadmium telluride films synthesized in a thermal field with a temperature gradient

2003 ◽  
Vol 37 (6) ◽  
pp. 646-648 ◽  
Author(s):  
A. P. Belyaev ◽  
V. P. Rubets ◽  
M. Yu. Nuzhdin
Keyword(s):  
Electrical Properties ◽  
Temperature Gradient ◽  
Cadmium Telluride ◽  
Thermal Field

Mechanisms of heteroepitaxial growth of cadmium telluride thin films in a thermal field of a temperature gradient

2001 ◽  
Vol 43 (4) ◽  
pp. 778-782 ◽  
Author(s):  
A. P. Belyaev ◽  
V. P. Rubets ◽  
M. Yu. Nuzhdin ◽  
I. P. Kalinkin
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Cadmium Telluride ◽  
Thermal Field ◽  
Heteroepitaxial Growth

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

2014 ◽  
Vol 9 (01) ◽  
pp. P01010-P01010 ◽  
Author(s):  
K M Oh ◽  
D K kim ◽  
J W Shin ◽  
S U Heo ◽  
J S Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Direct Conversion ◽  
Flat Panel ◽  
X Ray

Crystallization of a eutectic Pb-Sn melt in the thermal field of a temperature gradient

2001 ◽  
Vol 43 (4) ◽  
pp. 597-601 ◽  
Author(s):  
A. P. Belyaev ◽  
S. A. Kukushkin ◽  
V. P. Rubets
Keyword(s):  
Temperature Gradient ◽  
Thermal Field

scholarly journals Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

2018 ◽  
Vol 8 (2) ◽  
pp. 431 ◽  
Author(s):  
Bao Xiao ◽  
Mengqin Zhu ◽  
Binbin Zhang ◽  
Jiangpeng Dong ◽  
Leilei Ji ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Gradient ◽  
Solution Method ◽  
Optical And Electrical Properties ◽  
Gradient Solution

scholarly journals Electrical properties of CdTe thin layers

2019 ◽  
Vol 20 (4) ◽  
pp. 372-375
Author(s):  
V.V. Prokopiv ◽  
O.B. Kostyuk ◽  
B.S. Dzundza ◽  
T.M. Mazur ◽  
L.V. Turovska ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Thin Layers ◽  
Chemical Doping ◽  
Type Conductivity ◽  
Technological Factors ◽  
Layer Velocity ◽  
P Type

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

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