ABSTRACTThe electroluminescence (EL) properties of Er-doped Si nanoclusters (nc) embedded in metal-oxide-semiconductor devices are investigated. It is shown that, due to the presence of Si nc dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited producing an intense 1.54 μm room temperature luminescence. The EL properties as a function of the current density, temperature and time have been studied in details, elucidating the radiative and non-radiative de-excitation properties of the system. We have also estimated the excitation cross section for Er under electrical pumping finding a value of −1×10 cm. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si nc under optical pumping, and quantum efficiencies of ∼1% are obtained at room temperature in these devices. These data will be presented and the impact on future applications discussed.
Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping