Excitation cross section of erbium in semiconductor matrices under optical pumping

2001 ◽  
Vol 64 (7) ◽  
Author(s):  
O. B. Gusev ◽  
M. S. Bresler ◽  
P. E. Pak ◽  
I. N. Yassievich ◽  
M. Forcales ◽  
...  
Keyword(s):  
Cross Section ◽  
Optical Pumping ◽  
Excitation Cross Section

Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping

2001 ◽  
Vol 43 (4) ◽  
pp. 625-628 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
P. E. Pak ◽  
E. I. Terukov ◽  
I. N. Yassievich
Keyword(s):  
Cross Section ◽  
Optical Pumping ◽  
Excitation Cross Section ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Effective Excitation

scholarly journals Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

2014 ◽  
Vol 105 (5) ◽  
pp. 051106 ◽  
Author(s):  
R. Hui ◽  
R. Xie ◽  
I.-W. Feng ◽  
Z. Y. Sun ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Cross Section ◽  
Optical Pumping ◽  
Excitation Cross Section ◽  
Erbium Doped

Electroluminescent devices based on Er-doped Si nanoclusters

2002 ◽  
Vol 737 ◽  
Author(s):  
F. Priolo ◽  
F. Iacona ◽  
D. Pacifici ◽  
A. Irrera ◽  
M. Miritello ◽  
...  
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Optical Pumping ◽  
Excitation Cross Section ◽  
Oxide Semiconductor ◽  
Carrier Injection ◽  
A Value ◽  
Er Doped ◽  
The Impact ◽  
Effective Excitation

ABSTRACTThe electroluminescence (EL) properties of Er-doped Si nanoclusters (nc) embedded in metal-oxide-semiconductor devices are investigated. It is shown that, due to the presence of Si nc dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited producing an intense 1.54 μm room temperature luminescence. The EL properties as a function of the current density, temperature and time have been studied in details, elucidating the radiative and non-radiative de-excitation properties of the system. We have also estimated the excitation cross section for Er under electrical pumping finding a value of −1×10 cm. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si nc under optical pumping, and quantum efficiencies of ∼1% are obtained at room temperature in these devices. These data will be presented and the impact on future applications discussed.

Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping

2001 ◽  
Vol 82-84 ◽  
pp. 651-656
Author(s):  
Oleg B. Gusev ◽  
M.S. Bresler ◽  
P.E. Pak ◽  
I.N. Yassievich ◽  
M. Forcales ◽  
...  
Keyword(s):  
Cross Section ◽  
Optical Pumping ◽  
Excitation Cross Section

A Poor Man’s Approach to Semi-Quantitative Analysis with Electron Energy Loss Spectroscopy

1980 ◽  
Vol 38 ◽  
pp. 110-111
Author(s):  
M. Isaacson
Keyword(s):  
Quantitative Analysis ◽  
Energy Loss ◽  
Electron Energy ◽  
Cross Section ◽  
Electron Energy Loss Spectroscopy ◽  
Excitation Cross Section ◽  
Incident Electron ◽  
Integral Cross Section ◽  
Image Position ◽  
Electron Energy Loss

In an earlier paper1 it was found that to a good approximation, the efficiency of collection of electrons that had lost energy due to an inner shell excitation could be written as where σE was the total excitation cross-section and σE(θ, Δ) was the integral cross-section for scattering within an angle θ and with an energy loss up to an energy Δ from the excitation edge, EE. We then obtained: where , with P being the momentum of the incident electron of velocity v. The parameter r was due to the assumption that d2σ/dEdΩ∞E−r for energy loss E. In reference 1 it was assumed that r was a constant.

Electron Excitation Cross Section of the3S2→3P2Transition of Sodium

1965 ◽  
Vol 137 (2A) ◽  
pp. A388-A391 ◽  
Author(s):  
Larry L. Barnes ◽  
Neal F. Lane ◽  
Chun C. Lin
Keyword(s):  
Cross Section ◽  
Excitation Cross Section ◽  
Electron Excitation
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