Correlation between Si-related and erbium photoluminescence bands and determination of erbium effective excitation cross section in SiO2 films

2005 ◽  
Vol 98 (1) ◽  
pp. 013544 ◽  
Author(s):  
C.-C. Kao ◽  
C. Barthou ◽  
B. Gallas ◽  
S. Fisson ◽  
G. Vuye ◽  
...  
2001 ◽  
Vol 43 (4) ◽  
pp. 625-628 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
P. E. Pak ◽  
E. I. Terukov ◽  
I. N. Yassievich

2004 ◽  
Vol 817 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Youb Kim ◽  
Gun Yong Sung ◽  
Baek-Hyun Kim ◽  
Seong-Ju Park ◽  
...  

AbstractThe role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.


2002 ◽  
Vol 737 ◽  
Author(s):  
F. Priolo ◽  
F. Iacona ◽  
D. Pacifici ◽  
A. Irrera ◽  
M. Miritello ◽  
...  

ABSTRACTThe electroluminescence (EL) properties of Er-doped Si nanoclusters (nc) embedded in metal-oxide-semiconductor devices are investigated. It is shown that, due to the presence of Si nc dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited producing an intense 1.54 μm room temperature luminescence. The EL properties as a function of the current density, temperature and time have been studied in details, elucidating the radiative and non-radiative de-excitation properties of the system. We have also estimated the excitation cross section for Er under electrical pumping finding a value of −1×10 cm. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si nc under optical pumping, and quantum efficiencies of ∼1% are obtained at room temperature in these devices. These data will be presented and the impact on future applications discussed.


1973 ◽  
Vol 28 (11) ◽  
pp. 1871-1872 ◽  
Author(s):  
F. Karstensen ◽  
J. Pohl

In a crossed-beam experiment Na atoms are excited by electron impact with an energy of 11 eV. Determination of the excitation cross-section for the D-lines shows an increase of the measured cross-section with decreasing particle density in the atomic beam below 1012 cm-3.


2012 ◽  
Vol 46 (11) ◽  
pp. 1372-1375 ◽  
Author(s):  
B. A. Andreev ◽  
Z. F. Krasilnik ◽  
D. I. Kryzhkov ◽  
V. P. Kuznetsov ◽  
A. N. Yablonskiy

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