Mechanism of reverse current in the Al/p-InP schottky diodes

2001 ◽  
Vol 35 (2) ◽  
pp. 181-184 ◽  
Author(s):  
P. A. Pipinys ◽  
A. K. Rimeika ◽  
V. A. Lapeika ◽  
A. V. Pipiniene
Keyword(s):  
Schottky Diodes ◽  
Reverse Current

Pt Schottky contacts on Ga- and N-face surfaces of free-standing GaN

2001 ◽  
Vol 680 ◽  
Author(s):  
U. Karrer ◽  
C.R. Miskys ◽  
O. Ambacher ◽  
M. Stutzmann
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Forward Direction ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing ◽  
Band Bending ◽  
Barrier Heights ◽  
Consistent Solution ◽  
Lift Off ◽  
Gap States

ABSTRACTThick GaN films, grown by hydride vapor phase epitaxy (HVPE), were separated from their sapphire substrate with a laser-induced lift-off process. After cleaning and polishing, these films offer the most direct way to investigate and compare the influence of crystal polarity on the electronic properties of Ga-face and N-face surfaces, respectively. Different barrier heights for Pt Schottky diodes evaporated onto Ga- and N-face GaN are determined from the dependence of the effective barrier height versus ideality factor by I-V measurements to 1.15 eV and 0.80 eV, respectively. The charge neutrality condition at the surface is modified by the spontaneous polarization due to the polarization induced bound sheet charge. This effect has to be included in the electronegativity concept of metal induced gap states (MIGS) and can also be illustrated by different band bending of the conduction and valence band, inferred from the self-consistent solution of the Schrödinger-Poisson equation. Furthermore, temperature dependent I-V characteristics are compared to simulated behavior of Schottky diodes, exhibiting excellent agreement in forward direction, but showing deviations in the reverse current.

Mechanism of reverse current increase of vertical-type diamond Schottky diodes

2017 ◽  
Vol 122 (13) ◽  
pp. 135304 ◽  
Author(s):  
T. Teraji ◽  
A. Fiori ◽  
N. Kiritani ◽  
S. Tanimoto ◽  
E. Gheeraert ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Current Increase

STUDY OF SCHOTTKY DIODES FOR RESISTANCE FOR USE IN ELECTRONIC EQUIPMENT

2019 ◽  
Vol 12 (3) ◽  
pp. 78-83
Author(s):  
А. Яньков ◽  
A. Yankov ◽  
Константин Зольников ◽  
Konstantin Zolnikov ◽  
А. Кулай ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Electronic Equipment ◽  
Direct Excitation ◽  
Method Of Evaluation

The article presents the method of evaluation and results of research Schottky diodes resistance for use in electronic equipment. Studies were carried out to determine the structural and technological reserves for durability. Also in the article the schemes of inclusion of Schottky diodes for measurement of direct reverse current and direct excitation of the diode applied at researches are considered.

The Effect of Photochemical Surface Passivation on Reverse Current in Ti-GaAs Schottky Diodes

1988 ◽  
Vol 27 (Part 2, No. 3) ◽  
pp. L290-L292 ◽  
Author(s):  
Zdzislaw Meglicki ◽  
Brett D. Nener ◽  
Krishnamachar Prasad ◽  
Hemlata Sharda ◽  
Lorenzo Faraone ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Schottky Diodes ◽  
Reverse Current

Current Induced Degradation of a-Si:H Pin and Schottky Switches

1992 ◽  
Vol 258 ◽  
Author(s):  
K.J.B.M. Nieuwesteeg ◽  
J. Boogaard ◽  
G. Oversluizen
Keyword(s):  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Schottky Contact ◽  
Reverse Current ◽  
Bias Current ◽  
Hole Injection ◽  
Carrier Injection ◽  
Degradation Behaviour ◽  
Current Stress

ABSTRACTForward-bias current stress experiments were performed on α-Si:H p-i-n and Schottky switches at several temperatures and at current densities up to 6 A/cm2. In Schottky diodes, current stressing results in a lowering of the forward-bias SCLC current together with an increase of its thermal activation energy. The reverse current is unaffected. The rate of degradation of the forward current increases with increasing temperature. From a comparison of the degradation behaviour of Schottky's with different barrier height we find that the rate of degradation is correlated to the minority-carrier injection ratio of the Schottky contact. The effects are interpreted as being due to metastable state creation in the bulk α-Si:H. The rectifying properties of the metal-to-semiconductor contact are relatively stable to current stress.The forward-bias I-V curves of p-i-n diodes degrade much faster than those of the Schottky switches. At the same time, the reverse-bias current increases due to the stress. The lower stability to current-stress of p-i-n diodes is ascribed to the much higher hole injection in the mesa. After a short time, the reverse-bias current becomes dominated by e-h generation from the created deep states in the i-layer and then gives a direct indication of its time dependence.

A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes

2017 ◽  
Vol 64 (2) ◽  
pp. 407-411 ◽  
Author(s):  
Jian Ren ◽  
Wenjie Mou ◽  
Linna Zhao ◽  
Dawei Yan ◽  
Zhiguo Yu ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Degradation Mechanisms ◽  
Comprehensive Study

Reverse current transient behavior in amorphous silicon Schottky diodes at low biases

1997 ◽  
Vol 70 (24) ◽  
pp. 3260-3262 ◽  
Author(s):  
R. I. Hornsey ◽  
K. Aflatooni ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Transient Behavior ◽  
Current Transient

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

2007 ◽  
Vol 556-557 ◽  
pp. 873-876 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Total Charge ◽  
Average Value ◽  
Barrier Heights ◽  
Device Processing ◽  
Additional Protection ◽  
Thick Layers ◽  
Contact Size

High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and 45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 and 8×1014 cm-3, respectively) were used. Boron implants annealed under argon flow at 1500°C for 30 minutes, without any additional protection of the SiC surface, were used to form JTE’s. After annealing, the total charge in the JTE was tuned by reactive ion etching. Diodes with molybdenum Schottky contacts exhibited maximum reverse voltages of 1.45, 3.3 and 6.7 kV, representing more than 80% of the ideal avalanche breakdown voltages and corresponding to a maximum parallel-plane electric field of 1.8 MV/cm. Diodes with a contact size of 1×1 mm were formed on 10 +m thick layers (production grade) using the same device processing. Characterisation of the diodes across a quarter of a 2-inch wafer gave an average value of 1.21 eV for barrier heights and 1.18 for ideality factors. The diodes exhibited blocking voltages (defined as the maximum voltage at which reverse current does not exceed 0.1 mA) higher than 1 kV with a yield of 21 %.

scholarly journals Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5909
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Mouhamed Amine Wederni ◽  
Sabrine Mourad ◽  
Kamel Khirouni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Schottky Contacts ◽  
Temperature Range ◽  
Tunnel Mechanism ◽  
Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

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