Reverse current transient behavior in amorphous silicon Schottky diodes at low biases

1997 ◽  
Vol 70 (24) ◽  
pp. 3260-3262 ◽  
Author(s):  
R. I. Hornsey ◽  
K. Aflatooni ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Transient Behavior ◽  
Current Transient

Time Dependence of the Reverse Current in Amorphous Silicon Schottky Diodes

1997 ◽  
Vol 467 ◽  
Author(s):  
K. Aflatooni ◽  
R. Hornsey ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Hole Transport ◽  
Semiconductor Interface ◽  
Present Measurement ◽  
Measurement Results ◽  
Voltage Stress ◽  
Prolonged Stress

ABSTRACTWe present measurement results of the time-dependent reverse current in amorphous silicon Schottky diodes for a broad range of bias voltage stress conditions. The resultant behavior can be divided into three regimes, depending on the bias. At low biases, the reverse current exhibits a power-law dependence attributable to dispersive electron transport. In the medium bias regime, the current shows a dramatic increase which may be due to enhanced thermionic emission and tunneling of electrons across the barrier, enabled by hole transport to the metal-semiconductor interface. At high biases, the effects of prolonged stress were found to be irreversible. Here, an eventual decrease in reverse current was observed, with an associated loss of rectifying characteristics.

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

2012 ◽  
Vol 358 (17) ◽  
pp. 2007-2010 ◽  
Author(s):  
O.A. Maslova ◽  
M.E. Gueunier-Farret ◽  
J. Alvarez ◽  
A.S. Gudovskikh ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Modeling And Experiments ◽  
Capacitance Spectroscopy ◽  
Charge Capacitance

Pt Schottky contacts on Ga- and N-face surfaces of free-standing GaN

2001 ◽  
Vol 680 ◽  
Author(s):  
U. Karrer ◽  
C.R. Miskys ◽  
O. Ambacher ◽  
M. Stutzmann
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Forward Direction ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing ◽  
Band Bending ◽  
Barrier Heights ◽  
Consistent Solution ◽  
Lift Off ◽  
Gap States

ABSTRACTThick GaN films, grown by hydride vapor phase epitaxy (HVPE), were separated from their sapphire substrate with a laser-induced lift-off process. After cleaning and polishing, these films offer the most direct way to investigate and compare the influence of crystal polarity on the electronic properties of Ga-face and N-face surfaces, respectively. Different barrier heights for Pt Schottky diodes evaporated onto Ga- and N-face GaN are determined from the dependence of the effective barrier height versus ideality factor by I-V measurements to 1.15 eV and 0.80 eV, respectively. The charge neutrality condition at the surface is modified by the spontaneous polarization due to the polarization induced bound sheet charge. This effect has to be included in the electronegativity concept of metal induced gap states (MIGS) and can also be illustrated by different band bending of the conduction and valence band, inferred from the self-consistent solution of the Schrödinger-Poisson equation. Furthermore, temperature dependent I-V characteristics are compared to simulated behavior of Schottky diodes, exhibiting excellent agreement in forward direction, but showing deviations in the reverse current.

Mechanism of reverse current increase of vertical-type diamond Schottky diodes

2017 ◽  
Vol 122 (13) ◽  
pp. 135304 ◽  
Author(s):  
T. Teraji ◽  
A. Fiori ◽  
N. Kiritani ◽  
S. Tanimoto ◽  
E. Gheeraert ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Current Increase
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