scholarly journals Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5909
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Mouhamed Amine Wederni ◽  
Sabrine Mourad ◽  
Kamel Khirouni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Schottky Contacts ◽  
Temperature Range ◽  
Tunnel Mechanism ◽  
Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

2019 ◽  
Vol 247 ◽  
pp. 114370 ◽  
Author(s):  
V.E. Gora ◽  
F.D. Auret ◽  
H.T. Danga ◽  
S.M Tunhuma ◽  
C. Nyamhere ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Schottky Diodes ◽  
Temperature Range

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

2019 ◽  
Vol 48 (5) ◽  
pp. 3169-3182 ◽  
Author(s):  
A. Baltakesmez ◽  
A. Taşer ◽  
Z. Kudaş ◽  
B. Güzeldir ◽  
D. Ekinci ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Temperature Range

Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Reverse Current ◽  
Current Generation ◽  
Temperature Range ◽  
Working Temperature ◽  
Transport Diffusion

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION

2016 ◽  
Vol 24 (04) ◽  
pp. 1750047 ◽  
Author(s):  
OSMAN KAHVECI ◽  
ABDULLAH AKKAYA ◽  
ENISE AYYILDIZ ◽  
ABDÜLMECIT TÜRÜT
Keyword(s):  
Thermal Evaporation ◽  
Schottky Diodes ◽  
High Energy ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Near Surface ◽  
Magnetron Deposition ◽  
Measurement Temperature ◽  
Temperature Range

We have fabricated the Ti/[Formula: see text]-type GaAs Schottky diodes (SDs) by the DC magnetron deposition and thermal evaporation, cut from the same GaAs substrates, and we have made a comparative study of the current–voltage ([Formula: see text]–[Formula: see text]) measurements of both SDs in the measurement temperature range of 160–300[Formula: see text]K with steps of 10[Formula: see text]K. The barrier height (BH) values of about 0.82 and 0.76[Formula: see text]eV at 300[Formula: see text]K have been obtained for the sputtered and evaporated SDs, respectively. It has been seen that the apparent BH value for the diodes has decreased with decreasing temperature obeying the single-Gaussian distribution (GD) for the evaporated diode and the double-GD for the sputtered diode over the whole measurement temperature range. The increment in BH and observed discrepancies in the sputtered diode have been attributed to the reduction in the native oxide layer present on the substrate surface by the high energy of the sputtered atoms and to sputtering-induced defects present in the near-surface region. We conclude that the thermal evaporation technique yields better quality Schottky contacts for use in electronic devices compared to the DC magnetron deposition technique.

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

1996 ◽  
Vol 53 (1) ◽  
pp. 118-122 ◽  
Author(s):  
A Türüt ◽  
B Bati ◽  
A Kökçe ◽  
M Sağlam ◽  
N Yalçin
Keyword(s):  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias

Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

2005 ◽  
Vol 864 ◽  
Author(s):  
M. Li ◽  
W. A. Anderson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Dark Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Metal Deposition ◽  
Active Area ◽  
Electrode Spacing ◽  
Metal Semiconductor Metal

AbstractMetal-Semiconductor-Metal photodetectors (MSM-PD's) and simple Schottky diodes were fabricated using a low temperature (LT) technique to greatly reduce the device dark current. LT processing for metal deposition increased Schottky barrier height by improving the interface between metal and semiconductor to reduce the leakage current of the device. The structure consists of a 20 Å oxide over the active area to passivate surface states, a thicker oxide under contact pads to reduce dark current and the interdigitated Schottky contacts. A comparison was made for Schottky metal deposited with the substrate at 25 °C or -50 °C (LT). The devices fabricated using the LT process had better I-V characteristics compared to detectors fabricated using the standard room temperature (RT) metal deposition technique. The dark current for the LT film was found to be one to three orders lower in magnitude compared to the film deposited at RT. In one case, for example, the dark current was significantly reduced from 1.69 nA to 4.58 pA at 1.0 V. The active area for the device was determined to be 36 × 50 μm2 with 4 μm electrode width and 4 μm electrode spacing. Additionally, LT-MSM-PD's exhibited an excellent linear relationship between the photo-current and the incident light power. The Schottky barrier height for LT processing was found to be 0.79 eV; however, this value was 0.1 eV more than that of the same contact obtained by RT processing.

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