Observation of nonlinear coupling between drift and ion-acoustic oscillations in low-frequency plasma turbulence

2001 ◽  
Vol 27 (1) ◽  
pp. 56-61
Author(s):  
A. E. Petrov ◽  
K. A. Sarksyan ◽  
N. N. Skvortsova ◽  
N. K. Kharchev
Keyword(s):  
Low Frequency ◽  
Plasma Turbulence ◽  
Nonlinear Coupling ◽  
Acoustic Oscillations ◽  
Frequency Plasma ◽  
Ion Acoustic

The evolution of probability characteristics of low-frequency plasma turbulence

2012 ◽  
Vol 4 (1) ◽  
pp. 10-25 ◽  
Author(s):  
G. M. Batanov ◽  
A. K. Gorshenin ◽  
V. Yu. Korolev ◽  
D. V. Malakhov ◽  
N. N. Skvortsova
Keyword(s):  
Low Frequency ◽  
Plasma Turbulence ◽  
Frequency Plasma

On investigation of the fine structure of processes in low-frequency plasma turbulence

2013 ◽  
Author(s):  
Andrey K. Gorshenin ◽  
Victor Yu. Korolev ◽  
German M. Batanov ◽  
Nina N. Skvortsova ◽  
Dmitry V. Malakhov
Keyword(s):  
Fine Structure ◽  
Low Frequency ◽  
Plasma Turbulence ◽  
Frequency Plasma

Spectral characteristics of low-frequency plasma turbulence upstream of comet P/Halley

1989 ◽  
Vol 94 (A1) ◽  
pp. 37 ◽  
Author(s):  
K.-H. Glassmeier ◽  
A. J. Coates ◽  
M. H. Acuña ◽  
M. L. Goldstein ◽  
A. D. Johnstone ◽  
...  
Keyword(s):  
Spectral Characteristics ◽  
Low Frequency ◽  
Plasma Turbulence ◽  
Frequency Plasma

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

Local kinetic analysis of low-frequency electrostatic modes in tokamaks

1991 ◽  
Vol 69 (2) ◽  
pp. 102-106
Author(s):  
A. Hirose
Keyword(s):  
Dispersion Relation ◽  
Kinetic Analysis ◽  
Low Frequency ◽  
Acoustic Mode ◽  
Landau Damping ◽  
Trapped Electrons ◽  
Ion Acoustic ◽  
Transit Frequency

Analysis, based on a local kinetic dispersion relation in the tokamak magnetic geometry incorporating the ion transit frequency and trapped electrons, indicates that modes with positive frequencies are predominant. Unstable "drift"-type modes can have frequencies well above the diamagnetic frequency. They have been identified as the destabilized ion acoustic mode suffering little ion Landau damping even when [Formula: see text].

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