On investigation of the fine structure of processes in low-frequency plasma turbulence

Author(s):  
Andrey K. Gorshenin ◽  
Victor Yu. Korolev ◽  
German M. Batanov ◽  
Nina N. Skvortsova ◽  
Dmitry V. Malakhov
2012 ◽  
Vol 4 (1) ◽  
pp. 10-25 ◽  
Author(s):  
G. M. Batanov ◽  
A. K. Gorshenin ◽  
V. Yu. Korolev ◽  
D. V. Malakhov ◽  
N. N. Skvortsova

2001 ◽  
Vol 27 (1) ◽  
pp. 56-61
Author(s):  
A. E. Petrov ◽  
K. A. Sarksyan ◽  
N. N. Skvortsova ◽  
N. K. Kharchev

1989 ◽  
Vol 94 (A1) ◽  
pp. 37 ◽  
Author(s):  
K.-H. Glassmeier ◽  
A. J. Coates ◽  
M. H. Acuña ◽  
M. L. Goldstein ◽  
A. D. Johnstone ◽  
...  

Author(s):  
K. Hama

The lateral line organs of the sea eel consist of canal and pit organs which are different in function. The former is a low frequency vibration detector whereas the latter functions as an ion receptor as well as a mechano receptor.The fine structure of the sensory epithelia of both organs were studied by means of ordinary transmission electron microscope, high voltage electron microscope and of surface scanning electron microscope.The sensory cells of the canal organ are polarized in front-caudal direction and those of the pit organ are polarized in dorso-ventral direction. The sensory epithelia of both organs have thinner surface coats compared to the surrounding ordinary epithelial cells, which have very thick fuzzy coatings on the apical surface.


1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.


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