Low-frequency plasma turbulence during solar wind-comet interaction

1987 ◽  
Vol 133 (2) ◽  
pp. 203-218 ◽  
Author(s):  
G. S. Lakhina
2012 ◽  
Vol 4 (1) ◽  
pp. 10-25 ◽  
Author(s):  
G. M. Batanov ◽  
A. K. Gorshenin ◽  
V. Yu. Korolev ◽  
D. V. Malakhov ◽  
N. N. Skvortsova

2001 ◽  
Vol 27 (1) ◽  
pp. 56-61
Author(s):  
A. E. Petrov ◽  
K. A. Sarksyan ◽  
N. N. Skvortsova ◽  
N. K. Kharchev

2013 ◽  
Author(s):  
Andrey K. Gorshenin ◽  
Victor Yu. Korolev ◽  
German M. Batanov ◽  
Nina N. Skvortsova ◽  
Dmitry V. Malakhov

1989 ◽  
Vol 94 (A1) ◽  
pp. 37 ◽  
Author(s):  
K.-H. Glassmeier ◽  
A. J. Coates ◽  
M. H. Acuña ◽  
M. L. Goldstein ◽  
A. D. Johnstone ◽  
...  

1997 ◽  
Vol 19 (6) ◽  
pp. 877-881 ◽  
Author(s):  
Naiguo Lin ◽  
P.J. Kellogg ◽  
R.J. MacDowall ◽  
E.E. Scime ◽  
J.L. Phillips ◽  
...  

1996 ◽  
Vol 14 (8) ◽  
pp. 777-785 ◽  
Author(s):  
V. Carbone ◽  
R. Bruno

Abstract. Some signed measures in turbulence are found to be sign-singular, that is their sign reverses continuously on arbitrary finer scales with a reduction of the cancellation between positive and negative contributions. The strength of the singularity is characterized by a scaling exponent κ, the cancellation exponent. In the present study by using some turbulent samples of the velocity field obtained from spacecraft measurements in the interplanetary medium, we show that sign-singularity is present everywhere in low-frequency turbulent samples. The cancellation exponent can be related to the characteristic scaling laws of turbulence. Differences in the values of κ, calculated in both high- and low-speed streams, allow us to outline some physical differences in the samples with different velocities.


1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.


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