Radiative tunneling recombination and luminescence of trapezoidal δ-doped superlattices

1999 ◽  
Vol 33 (1) ◽  
pp. 89-92
Author(s):  
V. V. Osipov ◽  
A. Yu. Selyakov ◽  
M. Foygel
Keyword(s):  
Tunneling Recombination ◽  
Radiative Tunneling

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

2021 ◽  
Vol 118 (2) ◽  
pp. 021105
Author(s):  
Jian Yin ◽  
Ehsanollah Fathi ◽  
Hossein Zamani Siboni ◽  
Chao Xu ◽  
Dayan Ban
Keyword(s):  
Light Emitting Diodes ◽  
Surface Defects ◽  
Light Emitting ◽  
Tunneling Recombination ◽  
Assisted Tunneling

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4009-4012 ◽  
Author(s):  
Y. YAMASAKI ◽  
N. OHNO
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Luminescence Band ◽  
Radiative Decay ◽  
Time Resolved ◽  
Tunneling Recombination ◽  
Exciton Region ◽  
Time Resolved Photoluminescence ◽  
Stokes Shifts ◽  
2.5 Ev Luminescence

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

scholarly journals Влияние связующего и красителей на механизм туннельной люминесепнции микрокристаллов AgBr(I)

2020 ◽  
Vol 128 (8) ◽  
pp. 1100
Author(s):  
А.В. Тюрин ◽  
С.А. Жуков ◽  
А.Ю. Ахмеров
Keyword(s):  
Silver Ions ◽  
Point Of View ◽  
Exciting Light ◽  
Absorption Region ◽  
Recombination Processes ◽  
Tunneling Recombination ◽  
Recombination Centers ◽  
Kinetics Of ◽  
Stationary Level ◽  
Ir Light

It was previously found that in emulsion microcrystals (EMC) AgBr (I) (with silver content corresponding to pBr 4), the centers responsible for tunneling recombination at T = 77 K, with a maximum of luminescence at λmax~ 560 nm when excited from light from the absorption region of AgBr (I) EMCs (λ ~ 450 nm) as a result of temperature quenching, they undergo structural transformation into centers, which, under the same excitation, provide tunneling recombination with a wavelength depending on the binder: for EMC AgBr (I) obtained in water ‒ λmax~ 720 nm, in gelatin ‒ λmax~ 750 nm. In the present work, similar structural transformations of the centers determining tunneling recombination with λmax~ 560 nm, to the centers with luminescence on λmax~ 720 nm were implemented for AgBr (I) EMCs synthesized in polyvinyl alcohol (PVA) with an increase in the content of silver ions in the emulsion (from pBr 4 to 7). Responsible for this transformation, as follows from the obtained results, are mobile interstitial silver ions Agi +, which transform these tunnel recombination centers. The effect of the binder on the recombination processes in EMC AgBr (I) is manifested in changes in the kinetics of the increase in luminescence with λmax~ 560 nm upon excitation by light from the absorption region of AgBr (I) EMC (λ ~ 450 nm) to a stationary level. For a binder whose molecules do not interact with Ag centers Agin+, n = 1, 2 (water, PVA at pBr 4), increase in luminescence with λmax~ 560 nm occurs monotonically from zero to the maximum stationary level. For a binder (in our case, G is gelatin), whose molecules with centers Agin+ (n = 1,2) form complexes (Agin0G+), the kinetics of the increase in luminescence in EMC AgBr (I) to a stationary level at λmax~ 560 nm at pBr 4 is characterized by the presence of “flash flare”. Adsorption on the surface of EMC AgBr (I) (in PVA at pBr 7) of the dye is manifested as follows: if, before the introduction of the dye, the kinetics of the increase in luminescence with λmax~ 560 nm, when excited from light from the absorption region of AgBr (I) EMC (λ ~ 450 nm) to a stationary level, “flare-up” appeared, then after the introduction of the dye, the luminescence increases with λmax~ 560 nm occurs monotonically from zero to the maximum stationary level. Studies of the “flash” of luminescence stimulated by infrared (IR) light, after the termination of the action of exciting light, showed that when the kinetics of the increase in luminescence with λmax~ 560 nm to the stationary level, it exhibits "flare-up", a "flash" stimulated by IR light is not observed at λ ~ 560 nm. In the absence of “flash flare”, a “flash” at λ ~ 560 nm is observed. From our point of view, the results obtained indicate that “flare-up burning” is due to the presence of deep centers of electron localization with a small capture cross section, and not a photochemical reaction stimulated by exciting light. Key words: AgBr (I) microcrystals, emulsions, glow centers, luminescence flare-up.

Synthesis of a Novel Structure Carbon Nanocoils and their Application in Photo Diode Devices

2014 ◽  
Vol 1064 ◽  
pp. 89-94
Author(s):  
Mohammed Ibrahim Mohamed
Keyword(s):  
Thermal Decomposition ◽  
Atmospheric Pressure ◽  
Cylindrical Shape ◽  
The Novel ◽  
Stainless Steel Mesh ◽  
Forward Current ◽  
Novel Structure ◽  
Catalytic Thermal Decomposition ◽  
Tunneling Recombination ◽  
Preliminary Study

In this paper, the novel structure of carbon nanocoils were synthesized successfully by catalytic thermal decomposition of acetylene in CVD reactor under inert atmospheric pressure. Fe as a catalyst coated alumina beads used as substrate , both were placed inside a cylindrical shape stainless steel mesh SSC and located at the mid of CVD reactor. Preliminary study of application of prepared carbon nanocoil in synthesis of photodiode showed that the photodiode has a good rectification and the forward current obeys to tunneling-recombination model.

Tunneling recombination processes in PbWO4 crystals

2007 ◽  
Vol 4 (3) ◽  
pp. 918-921 ◽  
Author(s):  
P. Fabeni ◽  
V. Kiisk ◽  
A. Krasnikov ◽  
M. Nikl ◽  
G. P. Pazzi ◽  
...  
Keyword(s):  
Recombination Processes ◽  
Tunneling Recombination

Observation of Diffusion and Tunneling Recombination of Dye-Photoinjected Electrons in Ultrathin TiO2Layers by Surface Photovoltage Transients

2005 ◽  
Vol 109 (31) ◽  
pp. 14932-14938 ◽  
Author(s):  
Iván Mora-Seró ◽  
Thomas Dittrich ◽  
Abdelhak Belaidi ◽  
Germà Garcia-Belmonte ◽  
Juan Bisquert
Keyword(s):  
Surface Photovoltage ◽  
Tunneling Recombination

Tunneling recombination luminescence in KBr and KCl

1979 ◽  
Vol 20 (4) ◽  
pp. 337-342 ◽  
Author(s):  
V.J. Grabovskis ◽  
I.K. Vitols
Keyword(s):  
Recombination Luminescence ◽  
Tunneling Recombination

Tunneling recombination in spatially inhomogeneous structures

2006 ◽  
Vol 40 (5) ◽  
pp. 570-573
Author(s):  
N. S. Grushko ◽  
E. A. Loginova ◽  
L. N. Potanakhina
Keyword(s):  
Spatially Inhomogeneous ◽  
Tunneling Recombination

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Time Resolution ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Light ◽  
Dual Beam ◽  
Tunneling Recombination ◽  
Hydrogenated Amorphous

ABSTRACTDual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

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