Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

1997 ◽  
Vol 39 (10) ◽  
pp. 1691-1695 ◽  
Author(s):  
S. A. Gurevich ◽  
T. A. Zaraiskaya ◽  
S. G. Konnikov ◽  
V. M. Mikushkin ◽  
S. Yu. Nikonov ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Composite Films ◽  
Chemical State ◽  
X Ray

scholarly journals Polyarylene Ether Nitrile and Barium Titanate Nanocomposite Plasticized by Carboxylated Zinc Phthalocyanine Buffer

Polymers ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 418 ◽  
Author(s):  
Shuning Liu ◽  
Chenchen Liu ◽  
Changyu Liu ◽  
Ling Tu ◽  
Yong You ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Barium Titanate ◽  
Photoelectron Spectroscopy ◽  
Energy Dispersive Spectrometer ◽  
Composite Films ◽  
Zinc Phthalocyanine ◽  
Hydroxyl Groups ◽  
X Ray ◽  
Polyarylene Ether Nitrile ◽  
High Dielectric

Barium titanate (BT) and polyarylene ether nitrile (PEN) nanocomposites with enhanced dielectric properties were obtained by using carboxylatedzinc phthalocyanine (ZnPc-COOH) buffer as the plasticizer. Carboxylated zinc phthalocyanine, prepared through hydrolyzing ZnPc in NaOH solution, reacted with the hydroxyl groups on the peripheral of hydrogen peroxide treated BT (BT-OH) yielding core-shell structured BT@ZnPc. Thermogravimetric analysis (TGA), transmission electron microscopy (TEM), TEM energy dispersive spectrometer mapping, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared (FTIR) demonstrated successful preparation of BT@ZnPc. The fabricated BT@ZnPc was incorporated into the PEN matrix through the solution casting method. Rheological measurements demonstrated that the ZnPc-COOH buffer can improve the compatibility between BT and PEN effectively. With the existence of the ZnPc-COOH buffer, the prepared BT@ZnPc/PEN nanocomposites exhibit a high dielectric constant of 5.94 and low dielectric loss (0.016 at 1000 Hz). BT@ZnPc/PEN dielectric composite films can be easily prepared, presenting great application prospects in the field of organic film capacitors.

scholarly journals Preparation of N-Doped TiO2-ZrO2Composite Films under Electric Field and Heat Treatment and Assessment of Their Removal of Methylene Blue from Solution

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Lefu Mei ◽  
Ranfang Zuo ◽  
Jing Xie ◽  
Libing Liao ◽  
Hao Ding
Keyword(s):  
Methylene Blue ◽  
Electric Field ◽  
Visible Light ◽  
Composite Film ◽  
Photoelectron Spectroscopy ◽  
Composite Films ◽  
Partial Replacement ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
X Ray

TiO2-ZrO2composite film with the grain size of 50 nm was synthesized by electric field and heat (EF&H) treatments. Portions of O atoms in the TiO2network structure were replaced by N atoms as revealed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analyses, suggesting formation of a nonstoichiometric compoundTiO2-xNxon the composite film. The UV-Vis spectra of the film suggested that the visible light with wavelength of 550 nm could be absorbed for the N-doped composite film after EF&H treatment in comparison to a cutoff wavelength of 400 nm for the composite film without EF treatment. Photocatalytic experiments showed that the degradation rate of methylene blue by N-doped composite films increased significantly under visible light irradiation. The partial replacement of O by doped N played a very important role in narrowing the band gap and improving the visible light photocatalytic reactivity.

Chemical state of Tl in the superconductorTl2Ba2Ca2Cu3O10studied by x-ray photoelectron spectroscopy

1989 ◽  
Vol 40 (7) ◽  
pp. 5184-5186 ◽  
Author(s):  
T. Suzuki ◽  
M. Nagoshi ◽  
Y. Fukuda ◽  
Y. Syono ◽  
M. Kikuchi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical State ◽  
X Ray

scholarly journals X-ray Absorption Spectroscopy on Copper Trace Impurities on Silicon Wafers

2002 ◽  
Vol 716 ◽  
Author(s):  
Andy Singh ◽  
Katharina Baur ◽  
Sean Brennan ◽  
Takayuki Homma ◽  
Nobuhiro Kubo ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Semiconductor Industry ◽  
Pure Water ◽  
Chemical Species ◽  
Chemical State ◽  
Incidence Geometry ◽  
Chemical Information ◽  
Trace Impurities ◽  
X Ray ◽  
X Ray Absorption

AbstractTrace metal contamination during wet cleaning processes on silicon wafer surfaces is a detrimental effect that impairs device performance and yield. Determining the chemical state of deposited impurities helps in understanding how silicon surfaces interact with chemical species in cleaning solutions. However, since impurity concentrations of interest to the semiconductor industry are so low, conventional techniques such as x-ray photoelectron spectroscopy cannot be applied. Nonetheless, chemical information on trace levels of contaminants can be determined with x-ray absorption near edge spectroscopy (XANES) in a grazing incidence geometry. In this study, silicon samples were dipped in ultra pure water (UPW) and 2% hydrofluoric (HF) solutions with copper concentrations of 5 and 1000 ppb, respectively. These samples were then analyzed using XANES in fluorescence yield mode to determine the oxidation state of deposited copper contaminants. It was found that copper impurities on the silicon surface from HF solution were metal in character while copper impurities deposited from the spiked UPW solution were deposited as an oxide. These results show that XANES can provide information on the chemical state of trace impurities even at surface concentrations below a few thousandths of a monolayer.

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