scholarly journals Mechanical decoupling of quantum emitters in hexagonal boron nitride from low-energy phonon modes

2020 ◽  
Vol 6 (40) ◽  
pp. eaba6038 ◽  
Author(s):  
Michael Hoese ◽  
Prithvi Reddy ◽  
Andreas Dietrich ◽  
Michael K. Koch ◽  
Konstantin G. Fehler ◽  
...  

Quantum emitters in hexagonal boron nitride were recently reported to hold unusual narrow homogeneous linewidths of tens of megahertz within the Fourier transform limit at room temperature. This unique observation was traced back to decoupling from in-plane phonon modes. Here, we investigate the origins for the mechanical decoupling. New sample preparation improved spectral diffusion, which allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This sign for mechanical decoupling persists up to room temperature and explains the observed narrow lines at 300 kelvin. We investigate the dipole emission directionality and reveal preferred photon emission through channels between the layers supporting the claim for out-of-plane distorted defect centers. Our work provides insights into the underlying physics for the persistence of Fourier transform limit lines up to room temperature and gives a guide to the community on how to identify the exotic emitters.

APL Photonics ◽  
2020 ◽  
Vol 5 (7) ◽  
pp. 076103
Author(s):  
Robin Camphausen ◽  
Loris Marini ◽  
Sherif Abdulkader Tawfik ◽  
Toan Trong Tran ◽  
Michael J. Ford ◽  
...  

Optica ◽  
2018 ◽  
Vol 5 (9) ◽  
pp. 1128 ◽  
Author(s):  
Nicholas V. Proscia ◽  
Zav Shotan ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Charles Cohen ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Akbar Basha Dhu-al-jalali-wal-ikram Shaik ◽  
Penchalaiah Palla

AbstractSingle photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter’s fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Clarisse Fournier ◽  
Alexandre Plaud ◽  
Sébastien Roux ◽  
Aurélie Pierret ◽  
Michael Rosticher ◽  
...  

AbstractSingle photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.


2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Gabriele Grosso ◽  
Hyowon Moon ◽  
Benjamin Lienhard ◽  
Sajid Ali ◽  
Dmitri K. Efetov ◽  
...  

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.


2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  

Author(s):  
Fatemeh Tarighitabesh ◽  
Qaem Hassanzada ◽  
Mohammad Hadian ◽  
Arsalan Hashemi ◽  
Abdolhosseini Sarsari ◽  
...  

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