scholarly journals Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Hamidreza Akbari ◽  
Wei-Hsiang Lin ◽  
Benjamin Vest ◽  
Pankaj K. Jha ◽  
Harry A. Atwater
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spectral Emission ◽  
Temperature Dependent ◽  
Dielectric Substrates ◽  
Quantum Emitters

scholarly journals Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bottom Up ◽  
Boron Nitride Nanoparticles ◽  
Quantum Emitters

Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Density ◽  
High Quality ◽  
Quantum Emitters

scholarly journals Strain induced coupling and quantum information processing with hexagonal boron nitride quantum emitters

2021 ◽  
Author(s):  
Fatemeh Tarighitabesh ◽  
Qaem Hassanzada ◽  
Mohammad Hadian ◽  
Arsalan Hashemi ◽  
Abdolhosseini Sarsari ◽  
...  
Keyword(s):  
Information Processing ◽  
Quantum Information ◽  
Boron Nitride ◽  
Quantum Information Processing ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitters

scholarly journals Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Aleksandar Matković ◽  
Jakob Genser ◽  
Daniel Lüftner ◽  
Markus Kratzer ◽  
Radoš Gajić ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Van Der Waals ◽  
Dielectric Substrate ◽  
Force Microscopy ◽  
Dielectric Substrates ◽  
Field Effect Devices

Abstract This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexaphenyl grow with their long axes oriented five degrees off the hexagonal boron nitride zigzag directions. In addition, by tuning the deposition temperature and the thickness of hexagonal boron nitride, ordered networks of needle-like crystallites as long as several tens of micrometers can be obtained. A deeper understanding of the organic crystallites growth and ordering at ultra-thin van der Waals dielectric substrates will lead to grain boundary-free organic field effect devices, limited only by the intrinsic properties of the organic semiconductors.

Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

2021 ◽  
Author(s):  
Qinghai Tan ◽  
Jia-Min Lai ◽  
Xue-Lu Liu ◽  
Dan Guo ◽  
Yong-Zhou Xue ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Visible Spectrum ◽  
Conclusive Evidence ◽  
Fingerprint Matching ◽  
Acceptor Pair ◽  
Single Photon Emitters ◽  
Donor Acceptor ◽  
Quantum Emitters

Abstract Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are the most promising solid-state platform to date due to its high brightness, stability, and the possibility of spin photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here, we present concrete and conclusive evidence that the dense SPEs in hBN, across entire visible spectrum, can be well explained by donor-acceptor pairs (DAPs). Based on the DAP transition generation mechanism, we have calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.

Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

Nano Research ◽  
2016 ◽  
Vol 9 (10) ◽  
pp. 2931-2937 ◽  
Author(s):  
Yiming Zhu ◽  
Xinsheng Wang ◽  
Mei Zhang ◽  
Congzhong Cai ◽  
Liming Xie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Temperature Dependent
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