scholarly journals Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

2017 ◽  
Vol 3 (10) ◽  
pp. e1701661 ◽  
Author(s):  
Jun Hong Park ◽  
Atresh Sanne ◽  
Yuzheng Guo ◽  
Matin Amani ◽  
Kehao Zhang ◽  
...  
Nanoscale ◽  
2015 ◽  
Vol 7 (41) ◽  
pp. 17523-17528 ◽  
Author(s):  
Frank Ceballos ◽  
Matthew Z. Bellus ◽  
Hsin-Ying Chiu ◽  
Hui Zhao

Charge transfer excitons are observed in a van der Waals heterostructures formed by monolayer transition metal dichalcogenides.


2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.


2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.


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