scholarly journals Simulation of the dynamic oscillatory response of electrorheological suspensions: Demonstration of a relaxation mechanism

1993 ◽  
Vol 37 (2) ◽  
pp. 199-214 ◽  
Author(s):  
D. J. Klingenberg
Keyword(s):  
Relaxation Mechanism ◽  
Oscillatory Response ◽  
Electrorheological Suspensions

THE ROLE OF SUSPENSION STRUCTURE IN THE DYNAMIC RESPONSE OF ELECTRORHEOLOGICAL SUSPENSIONS

1994 ◽  
Vol 08 (20n21) ◽  
pp. 2789-2809 ◽  
Author(s):  
M. PARTHASARATHY ◽  
K. H. AHN ◽  
B. M. BELONGIA ◽  
D. J. KLINGENBERG
Keyword(s):  
Dynamic Response ◽  
Equations Of Motion ◽  
Superposition Principle ◽  
Experimental Investigations ◽  
Linear Deformation ◽  
Rheological Response ◽  
Oscillatory Response ◽  
Electrorheological Suspensions ◽  
Suspension Structure

The dynamic response of electrorheological (ER) suspensions has received little attention relative to the effort devoted to the study of the steady shear response. We report on simulation and experimental investigations of the dynamic oscillatory response of ER suspensions, in particular focusing on the relationship between suspension structure and the rheological response. We consider the response of monodisperse and polydisperse suspensions under linear deformation, as well as the response in the nonlinear regime. Dimensional analysis of the equations of motion predict that the linear rheological response obeys a time-field strength superposition principle, which is confirmed by experiment. The response is found to exhibit a sharp dispersion that is only broadened slightly by polydispersity. Nonlinear deformation is found to significantly broaden the observed dispersion.

Optical orientation of electron spins and their relaxation mechanism in n-type GaAs

2013 ◽  
Vol 48 (2) ◽  
pp. 131-136
Author(s):  
MI Miah ◽  
A Staff
Keyword(s):  
Relaxation Mechanism ◽  
Optical Orientation ◽  
Electron Spins

Bangladesh J. Sci. Ind. Res. 48(2), 131-136, 2013 DOI: http://dx.doi.org/10.3329/bjsir.v48i2.15744

Correlating Blocking Temperatures in Single Molecule Magnets with Raman Relaxation

2018 ◽  
Author(s):  
Marcus J. Giansiracusa ◽  
Andreas Kostopoulos ◽  
George F. S. Whitehead ◽  
David Collison ◽  
Floriana Tuna ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Single Molecule ◽  
Energy Barrier ◽  
Thermal Relaxation ◽  
Relaxation Mechanism ◽  
Blocking Temperature ◽  
Single Molecule Magnets ◽  
Single Molecule Magnet ◽  
Key Parameter

We report a six coordinate DyIII single-molecule magnet<br>(SMM) with an energy barrier of 1110 K for thermal relaxation of<br>magnetization. The sample shows no retention of magnetization<br>even at 2 K and this led us to find a good correlation between the<br>blocking temperature and the Raman relaxation regime for SMMs.<br>The key parameter is the relaxation time (𝜏<sub>switch</sub>) at the point where<br>the Raman relaxation mechanism becomes more important than<br>Orbach.

Deciphering the Relaxation Mechanism of Red-Emitting Carbon Dots Using Ultrafast Spectroscopy and Global Target Analysis

2021 ◽  
Vol 12 (33) ◽  
pp. 8080-8087 ◽  
Author(s):  
Srijon Ghosh ◽  
Arnab Ghosh ◽  
Goutam Ghosh ◽  
Kritiman Marjit ◽  
Amitava Patra
Keyword(s):  
Carbon Dots ◽  
Ultrafast Spectroscopy ◽  
Relaxation Mechanism ◽  
Target Analysis ◽  
Global Target

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

scholarly journals Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

2000 ◽  
Vol 76 (24) ◽  
pp. 3552-3554 ◽  
Author(s):  
H. Trinkaus ◽  
B. Holländer ◽  
St. Rongen ◽  
S. Mantl ◽  
H.-J. Herzog ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism
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