High frequency ultrasonic scattering from cracks in orthotropic silicon wafers

2021 ◽  
Vol 150 (4) ◽  
pp. A67-A67
Author(s):  
Lauren Katch ◽  
Andrea Arguelles
Keyword(s):  
High Frequency ◽  
Silicon Wafers ◽  
Ultrasonic Scattering

Study of ion implantation and annealing effects in silicon wafers using high-frequency phonon scattering

1992 ◽  
Vol 18 (8) ◽  
pp. 631-636 ◽  
Author(s):  
K. R. Strickland ◽  
S. C. Edwards ◽  
J. K. Wigmore ◽  
R. A. Collins ◽  
C. Jeynes
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Phonon Scattering ◽  
Silicon Wafers ◽  
Annealing Effects

Processing Grinding-Damaged Silicon Wafers by High-Frequency Nano-Second Laser Irradiation

2009 ◽  
Vol 76-78 ◽  
pp. 451-456
Author(s):  
Ji Wang Yan ◽  
Sei Ya Muto ◽  
Tsunemoto Kuriyagawa
Keyword(s):  
Energy Density ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
High Frequency ◽  
Laser Energy ◽  
Large Diameter ◽  
Silicon Wafers ◽  
Density Level ◽  
Transmission Electron ◽  
Beam Center

Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

scholarly journals Defect detection in monocrystalline silicon wafers using high frequency guided waves

2019 ◽  
Author(s):  
Bernard Masserey ◽  
Mathieu Simon ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
Defect Detection ◽  
High Frequency ◽  
Guided Waves ◽  
Silicon Wafers ◽  
Monocrystalline Silicon

scholarly journals High frequency guided wave propagation in monocrystalline silicon wafers

2017 ◽  
Author(s):  
Marco Pizzolato ◽  
Bernard Masserey ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
Wave Propagation ◽  
High Frequency ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Guided Wave Propagation

High Frequency Guided Wave Propagation and Scattering in Silicon Wafers

2021 ◽  
pp. 1-18
Author(s):  
Jean-Luc Robyr ◽  
Mathieu Simon ◽  
Bernard Masserey ◽  
Paul Fromme
Keyword(s):  
Wave Propagation ◽  
Wave Field ◽  
High Frequency ◽  
Surface Defects ◽  
Wave Mode ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Custom Made

Abstract Thin monocrystalline silicon wafers are employed for the manufacture of solar cells with high conversion efficiency. Micro-cracks can be induced by the wafer cutting process, leading to breakage of the fragile wafers. High frequency guided waves allow for the monitoring of wafers and detection and characterization of surface defects. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the guided wave mode and propagation direction relative to the crystal orientation. Selective excitation of the first anti-symmetric A0 wave mode at 5 MHz center frequency was achieved experimentally using a custom-made wedge transducer. Strong wave pulses with limited beam skewing and widening were measured using non-contact laser interferometer measurements. This allowed the accurate characterization of the Lamb wave propagation and scattering at small artificial surface defects with a size of less than 100 µm. The surface extent of the defects of varying size was characterized using an optical microscope. The scattered guided wave field was evaluated, and characteristic parameters extracted and correlated to the defect size, allowing in principle detection of small defects. Further investigations are required to explain the systematic asymmetry of the guided wave field in the vicinity of the indents.

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