Modeling range dependent sediment and interface roughness effects on propagation loss with finite elements

2014 ◽  
Vol 135 (4) ◽  
pp. 2298-2298
Author(s):  
Marcia Isakson ◽  
Nicholas Chotiros
Keyword(s):  
Finite Elements ◽  
Interface Roughness ◽  
Propagation Loss ◽  
Roughness Effects

Interface roughness effects in Gaussian superlattices

2001 ◽  
Vol 16 (5) ◽  
pp. 304-309 ◽  
Author(s):  
Francesco Banfi ◽  
Vittorio Bellani ◽  
Ignacio Gómez ◽  
Enrique Diez ◽  
Francisco Domínguez-Adame
Keyword(s):  
Interface Roughness ◽  
Roughness Effects

scholarly journals Interface Roughness Effects in Ultra-Thin Tunneling Oxides

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 47-51 ◽  
Author(s):  
D. Z.-Y. Ting ◽  
Erik S. Daniel ◽  
T. C. Mcgill
Keyword(s):  
Silicon Oxide ◽  
Theoretical Study ◽  
Interface Roughness ◽  
Oxide Interface ◽  
Roughness Effects ◽  
Direct Tunneling ◽  
Silicon Based

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime, they are less important in the Fowler-Nordheim regime.

Interface roughness effects on the performance of magnetic tunnel junctions

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3941-3945 ◽  
Author(s):  
Zongzhi Zhang ◽  
Hui Zhao ◽  
Yang Ren ◽  
B. Ma ◽  
Q.Y. Jin
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Interface Roughness ◽  
Roughness Effects

Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality

MRS Advances ◽  
2016 ◽  
Vol 1 (23) ◽  
pp. 1721-1727
Author(s):  
Wei-Che Sun ◽  
Fukino Kazami ◽  
Jing Wang ◽  
Taizo Nakasu ◽  
Shota Hattori ◽  
...  
Keyword(s):  
Large Scale ◽  
Lattice Mismatch ◽  
Single Step ◽  
Interface Roughness ◽  
Propagation Loss ◽  
Reciprocal Space Mapping ◽  
Step Index ◽  
Cladding Layer ◽  
Plane Lattice ◽  
Waveguide Device

ABSTRACTZnMgTe(Cladding)/ZnTe(Core)/ZnMgTe(Cladding) thin film waveguide had been grown by molecular beam epitaxy (MBE) and presented a great potential to be a high performance Electro-optical (EO) modulator. For a low propagation loss ZnMgTe/ZnTe waveguide, thick cladding layer with high Mg composition (Mg %) is needed. However, the in-plane lattice mismatch of the fabricated device with high Mg % and thick cladding layer was large. It might cause the cladding/core interface roughness and asperities due to the misfit dislocation, and degrade the device performance. Because EO property of waveguide device is primarily influence by the structure thickness, the device efficiency improvement in this study was only considered to reduce the defects asperities that would cause propagation loss without decreasing the Mg % or the total thickness of the cladding layers. Therefore, we introduced a low Mg % layer between the cladding and the core layer to circumvent the effect of large lattice mismatch. The in-plane lattice mismatch of the devices was monitored using reciprocal space mapping, and surface morphologies were also observed using atom force microscope. The two-step index ZnMgTe/ZnTe waveguide had shown to have lower degree of relaxation compared to that of single-step index waveguide device with close Mg % and cladding layer thickness. Therefore, the crystal degradation of the two-step-index waveguide caused by lattice mismatch was successfully suppressed by introduction extra low Mg % layers. The morphologies of the two kinds of waveguide structures have similar surface asperities, which indicated the extra inserted layers did not produce additional large scale asperities at the interfaces that would increase the propagation loss.

scholarly journals Surface/interface roughness effects on magneto-electrical properties of thin films

2002 ◽  
Vol 507-510 ◽  
pp. 541-545 ◽  
Author(s):  
G. Palasantzas ◽  
J.Th.M. De Hosson ◽  
J. Barnas
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Interface Roughness ◽  
Roughness Effects
Sign in / Sign up

Export Citation Format

Share Document