scholarly journals Interface roughness effects on transport in tunnel structures

Author(s):  
D. Z.-Y. Ting
2001 ◽  
Vol 16 (5) ◽  
pp. 304-309 ◽  
Author(s):  
Francesco Banfi ◽  
Vittorio Bellani ◽  
Ignacio Gómez ◽  
Enrique Diez ◽  
Francisco Domínguez-Adame

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 47-51 ◽  
Author(s):  
D. Z.-Y. Ting ◽  
Erik S. Daniel ◽  
T. C. Mcgill

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime, they are less important in the Fowler-Nordheim regime.


2007 ◽  
Vol 515 (7-8) ◽  
pp. 3941-3945 ◽  
Author(s):  
Zongzhi Zhang ◽  
Hui Zhao ◽  
Yang Ren ◽  
B. Ma ◽  
Q.Y. Jin

2002 ◽  
Vol 507-510 ◽  
pp. 541-545 ◽  
Author(s):  
G. Palasantzas ◽  
J.Th.M. De Hosson ◽  
J. Barnas

1997 ◽  
Vol 164 (1) ◽  
pp. 137-140 ◽  
Author(s):  
Y. Galvão ◽  
A.L.C. Triques ◽  
P. A. Schulz

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