A time‐dependent study of resonant tunneling through a double barrier

1996 ◽  
Vol 64 (3) ◽  
pp. 264-276 ◽  
Author(s):  
A. P. Stamp ◽  
G. C. McIntosh
Keyword(s):  
Resonant Tunneling ◽  
Time Dependent ◽  
Double Barrier

Time‐dependent investigation of the resonant tunneling in a double‐barrier quantum well

1988 ◽  
Vol 53 (2) ◽  
pp. 131-133 ◽  
Author(s):  
H. Guo ◽  
K. Diff ◽  
G. Neofotistos ◽  
J. D. Gunton
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Time Dependent ◽  
Double Barrier

scholarly journals Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 413-417 ◽  
Author(s):  
Peiji Zhao ◽  
H. L. Cui ◽  
D. Woolard ◽  
Fliex Buot
Keyword(s):  
Numerical Simulation ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Energy Coupling ◽  
Coupling Model ◽  
Time Dependent ◽  
Double Barrier ◽  
Operational Principle ◽  
Quantum Well Structure ◽  
Fixed Bias

Based on time-dependent numerical simulation of an double barrier quantum well structure, a time-dependent energy coupling model is presented to account for the operational principle of a new kind of resonant tunneling THz oscillators.

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

Disorder effects on resonant tunneling in double-barrier quantum wells

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Disorder Effects
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