scholarly journals Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 413-417 ◽  
Author(s):  
Peiji Zhao ◽  
H. L. Cui ◽  
D. Woolard ◽  
Fliex Buot
Keyword(s):  
Numerical Simulation ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Energy Coupling ◽  
Coupling Model ◽  
Time Dependent ◽  
Double Barrier ◽  
Operational Principle ◽  
Quantum Well Structure ◽  
Fixed Bias

Based on time-dependent numerical simulation of an double barrier quantum well structure, a time-dependent energy coupling model is presented to account for the operational principle of a new kind of resonant tunneling THz oscillators.

Time‐dependent investigation of the resonant tunneling in a double‐barrier quantum well

1988 ◽  
Vol 53 (2) ◽  
pp. 131-133 ◽  
Author(s):  
H. Guo ◽  
K. Diff ◽  
G. Neofotistos ◽  
J. D. Gunton
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Time Dependent ◽  
Double Barrier

Noncontact thickness and composition assessment of a strained AlGaAs/AlAs/InGaAs double barrier multiple quantum well structure

1996 ◽  
Vol 80 (4) ◽  
pp. 2521-2523 ◽  
Author(s):  
V. W. L. Chin ◽  
R. J. Egan ◽  
T. Osotchan ◽  
M. R. Vaughan ◽  
S. C. Anderson
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Double Barrier ◽  
Quantum Well Structure
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