Interlayer Dielectrics

2017 ◽  
Author(s):  
Christoph Steinbrüchel ◽  
Barry L. Chin
Keyword(s):  
Interlayer Dielectrics

Materials Issues and Characterization of Low-k Dielectric Materials

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho
Keyword(s):  
Process Integration ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Thermomechanical Properties ◽  
General Criterion ◽  
Crosstalk Noise ◽  
Total Delay ◽  
Interlayer Dielectrics ◽  
Performance Improvements ◽  
And Performance

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.

Surface modified spin-on xerogel films as interlayer dielectrics

1999 ◽  
Vol 17 (1) ◽  
pp. 205 ◽  
Author(s):  
S. V. Nitta ◽  
V. Pisupatti ◽  
A. Jain ◽  
P. C. Wayner ◽  
W. N. Gill ◽  
...  
Keyword(s):  
Interlayer Dielectrics ◽  
Surface Modified ◽  
Xerogel Films

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Novel flowable CVD process technology for sub-20nm interlayer dielectrics

2012 ◽  
Author(s):  
Honggun Kim ◽  
Seungheon Lee ◽  
Jun-Won Lee ◽  
ByeongJu Bae ◽  
YongSoon Choi ◽  
...  
Keyword(s):  
Process Technology ◽  
Interlayer Dielectrics

Anisotropy in Thermal, Electrical and Mechanical Properties of Spin-Coated Polymer Dielectrics

1994 ◽  
Vol 338 ◽  
Author(s):  
Sue Ann Bidstrup ◽  
Thomas C. Hodge ◽  
Linda Lin ◽  
Paul A. Kohl ◽  
J.B. Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Three Dimensional ◽  
Interlayer Dielectrics ◽  
Polymer Dielectrics ◽  
Degree Of Orientation ◽  
High Degree ◽  
Interconnection Structure

ABSTRACTIn MCM-D applications, interlayer dielectrics separate and insulate metal conductors to form a three-dimensional interconnection structure. Due to the three-dimensional nature of these structures, the thermal, electrical and mechanical properties of the dielectricmaterials must be known for all orientations in order to correctly design and simulate devices. The most commonly used polymer in microelectronics, polyimide, exists in formulations which have been shown to have a high degree of orientation and exhibit anisotropicproperties.

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