Chip integration of Sea of Leads compliant I/O interconnections for the ultimate enabling of chips with low-k interlayer dielectrics

2004 ◽  
Author(s):  
M.S. Bakir ◽  
Bing Dang ◽  
R. Emery ◽  
G. Vandentop ◽  
K.P. Martin ◽  
...  
Keyword(s):  
Interlayer Dielectrics ◽  
Low K

scholarly journals Carbon-Enriched Amorphous Hydrogenated Boron Carbide Films for Very-Low-k Interlayer Dielectrics

2017 ◽  
Vol 3 (12) ◽  
pp. 1700116 ◽  
Author(s):  
Bradley J. Nordell ◽  
Thuong D. Nguyen ◽  
Anthony N. Caruso ◽  
Sudhaunshu S. Purohit ◽  
Nathan A. Oyler ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Interlayer Dielectrics ◽  
Amorphous Hydrogenated Boron Carbide ◽  
Low K

Sea of leads compliant I/O interconnect process integration for the ultimate enabling of chips with low-k interlayer dielectrics

2005 ◽  
Vol 28 (3) ◽  
pp. 488-494 ◽  
Author(s):  
M.S. Bakir ◽  
B. Dang ◽  
R. Emery ◽  
G. Vandentop ◽  
P.A. Kohl ◽  
...  
Keyword(s):  
Process Integration ◽  
Interlayer Dielectrics ◽  
Low K

All-carbocycle hydrocarbon thermosets with high thermal stability and robust mechanical strength for low-k interlayer dielectrics

2021 ◽  
Author(s):  
Yudi Feng ◽  
Ke Jin ◽  
Jia Guo ◽  
Changchun Wang
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
Dielectric Materials ◽  
High Thermal Stability ◽  
Thermal Stabilities ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Low Permittivity ◽  
Low K

The development of modern microelectronic industry calls for low permittivity interlayer dielectric materials with excellent thermal stabilities, robust mechanical strength and matching processability. Traditionally, it is difficult to fabricate materials...

Fabrication of mesoporous silica for ultra-low-k interlayer dielectrics

2005 ◽  
Author(s):  
Nobutoshi Fujii ◽  
Kazuo Kohmura ◽  
Takahiro Nakayama ◽  
Hirofumi Tanaka ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Interlayer Dielectrics ◽  
Low K

Mechanical Enhancement Of Nanoporous Low-K Films As Interlayer Dielectrics By Ion Implantation

2002 ◽  
Vol 734 ◽  
Author(s):  
Alok Nandini U. Roy ◽  
Zubin P. Patel ◽  
A. Mallikarjunan ◽  
H. Bakhru ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Room Temperature ◽  
Surface Hardness ◽  
Porous Films ◽  
Interlayer Dielectrics ◽  
Low K

ABSTRACTThin films of Ultra-Low K materials such as Xerogel (K=1.76) and MSQ (K=2.2) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm−2 and 1 × 1016 cm−2 dose at energies varying from 20 to 50 keV at room temperature. In this work we showed that the surface hardness of the porous films is improved five times as compared to the as-deposited porous films sacrificing the dielectric constant up to 15% after implantation (e.g., from 1.76 to 2.0). The hardness persists after 450 °C annealing. It is also shown that implantation can prevent the penetration of chemical gases such as CVD precursors in the Ultra-Low K dielectrics during a CVD process.

Optical functions of low-k materials for interlayer dielectrics

2001 ◽  
Vol 89 (4) ◽  
pp. 2189-2193 ◽  
Author(s):  
K. Postava ◽  
T. Yamaguchi
Keyword(s):  
Interlayer Dielectrics ◽  
Optical Functions ◽  
Low K

Preparation of Nano Structured SiOC Thin Film for Low k Application

2010 ◽  
Vol 11 ◽  
pp. 85-88 ◽  
Author(s):  
Woo Teck Kwon ◽  
J.H. Lee ◽  
Soo Ryong Kim ◽  
H.T. Kim ◽  
Hyung Sun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dip Coating ◽  
Interlayer Dielectrics ◽  
Promising Application ◽  
Cu Interconnect ◽  
Interconnect Technology ◽  
Low K ◽  
Mim Capacitors

In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

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