Thermal annealing effect on the electrical properties of the Pt/Al0.45Ga0.55N Schottky contacts

2012 ◽  
Author(s):  
Caijing Cheng ◽  
Junjie Si
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Schottky Contacts ◽  
Annealing Effect

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

Thermal annealing effect on structural and electrical properties of chemical bath-deposited CdS films

2008 ◽  
Vol 516 (20) ◽  
pp. 7008-7012 ◽  
Author(s):  
J. Hiie ◽  
K. Muska ◽  
V. Valdna ◽  
V. Mikli ◽  
A. Taklaja ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Annealing Effect ◽  
Structural And Electrical Properties ◽  
Cds Films

The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties.

1991 ◽  
Vol 240 ◽  
Author(s):  
Prashant Phatak ◽  
Mitsuru Imaizumi ◽  
E. R. Weber ◽  
N. Newman ◽  
Z. Liliental-Weber
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Treatment ◽  
Schottky Contacts ◽  
High Resolution Tem ◽  
Thermal Annealing Treatment ◽  
Effect Transistor ◽  
Abrupt Interface ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe self-aligned GaAs metal-semiconductor field-effect transistor technology requires that the gate material maintains a good rectifying contact with the GaAs substrate when subjected to high-temperature annealing around 800–900° C. ZrN Schottky contacts to GaAs were previously shown to have excellent electrical properties at high tempratures. An increase of barrier height and a decrease in the reverse breakdown voltage with rapid thermal annealing at temperatures up to 900° C has been observed. The ideality factor increases after rapid thermal annealing at 900° C.In an attempt to explain the above observations, we investigated the interface structure of such contacts under as-deposited and annealed conditions. By high resolution TEM it was found that the interface of as-deposited samples is fairly flat but protrusions form after rapid thermal annealing treatment at 850 and 900° C. The selected area diffraction analysis shows the presence of ZrO2 near the interface.It is therefore likely that protrusions are the cause of the degradation of electrical properties of the contacts. These protrusions may be caused by the presence of a residual oxide layer before deposition. Indeed, a deposition of ZrN after sputter cleaning the substrates before deposition procedure resulted in an abrupt interface even after annealing at 900° C.

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