Thermal annealing effect on the electrical properties and structural defects density of non-stoichiometric a-GaAs films

2005 ◽  
Vol 368 (1-4) ◽  
pp. 209-214 ◽  
Author(s):  
F.A. Abdel-Wahab ◽  
M.F. Kotkata
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Annealing Effect ◽  
Structural Defects ◽  
Gaas Films

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

Thermal annealing effect on structural and electrical properties of chemical bath-deposited CdS films

2008 ◽  
Vol 516 (20) ◽  
pp. 7008-7012 ◽  
Author(s):  
J. Hiie ◽  
K. Muska ◽  
V. Valdna ◽  
V. Mikli ◽  
A. Taklaja ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Annealing Effect ◽  
Structural And Electrical Properties ◽  
Cds Films

scholarly journals Investigation of Thermal Annealing Effect on Bilayer Graphene by Isotope‐Labeling‐Assisted Raman Spectroscopy

2020 ◽  
Vol 257 (12) ◽  
pp. 2070047
Author(s):  
Jinglan Liu ◽  
Xuewei Zhang ◽  
Yanhan Jin ◽  
Yang Zhang ◽  
Zilong Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Isotope Labeling ◽  
Bilayer Graphene ◽  
Annealing Effect

scholarly journals Investigation of Graphene Derivatives on Electrical Properties of Alkali Activated Slag Composites

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4374
Author(s):  
Wu-Jian Long ◽  
Xuanhan Zhang ◽  
Biqin Dong ◽  
Yuan Fang ◽  
Tao-Hua Ye ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Electrical Properties ◽  
Mechanical Performance ◽  
Structural Defects ◽  
Alkali Activated Slag ◽  
Mechanical And Electrical Properties ◽  
Reduced Graphene ◽  
Graphene Derivatives ◽  
Activated Slag ◽  
Alkali Activated

Reduced graphene oxide (rGO) has been widely used to modify the mechanical performance of alkali activated slag composites (AASC); however, the mechanism is still unclear and the electrical properties of rGO reinforced AASC are unknown. Here, the rheological, mechanical, and electrical properties of the AASC containing rGO nanosheets (0, 0.1, 0.2, and 0.3 wt.%) are investigated. Results showed that rGO nanosheets addition can significantly improve the yield stress, plastic viscosity, thixotropy, and compressive strength of the AASC. The addition of 0.3 wt.% rGO nanosheets increased the stress, viscosity, thixotropy, and strength by 186.77 times, 3.68 times, 15.15 times, and 21.02%, respectively. As for electrical properties, the impedance of the AASC increased when the rGO content was less than 0.2 wt.% but decreased with the increasing dosage. In contrast, the dielectric constant and electrical conductivity of the AASC containing rGO nanosheets decreased and then increased, which can be attributed to the abundant interlayer water and the increasing structural defects as the storage sites for charge carriers, respectively. In addition, the effect of graphene oxide (GO) on the AASC is also studied and the results indicated that the agglomeration of GO nanosheets largely inhibited the application of it in the AASC, even with a small dosage.

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